Study of the 3C-SiC layers grown on the 15R-SiC substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-06-09

AUTHORS

A. A. Lebedev, P. L. Abramov, E. V. Bogdanova, A. S. Zubrilov, S. P. Lebedev, D. K. Nelson, N. V. Seredova, A. N. Smirnov, A. S. Tregubova

ABSTRACT

The 3C-SiC layers grown on the 15R-SiC substrates by sublimation epitaxy in vacuum are studied. Using X-ray topography and Raman spectroscopy, it is shown that the obtained layers are of a rather high structural quality. By the data of the Raman spectroscopy and capacitance-voltage measurements, it is established that the electron concentration in the 3C-SiC layer is (4–6) × 1018 cm−3. More... »

PAGES

756-759

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378260906013x

DOI

http://dx.doi.org/10.1134/s106378260906013x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1013628047


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