Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K) View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-05-06

AUTHORS

L. Ya. Karachinsky, I. I. Novikov, Yu. M. Shernyakov, N. Yu. Gordeev, A. S. Payusov, M. V. Maximov, S. S. Mikhrin, M. B. Lifshits, V. A. Shchukin, P. S. Kop’ev, N. N. Ledentsov, D. Bimberg

ABSTRACT

Lasers that emit in the 1.3 μm wavelength range and include the active region based on InAs quantum dots were grown by the method of molecular-beam epitaxy and have been studied. The cavity includes a multilayer interference reflector, which brings about the fact that a large factor of optical confinement and low leakage losses are obtained only for the light propagating at some angle and, consequently, having a strictly definite wavelength. It is shown that, due to the use of such a waveguide structure, the temperature shift of the lasing wavelength is 0.2 nm/K, which is 2.5 times smaller than this shift in the lasers with quantum dots and with a conventional structure of the waveguide. The lasers with the stripe-contact width W = 10 μm exhibited the spatially single-mode emission, which verifies the advantages of the suggested nonconventional structure of the optical waveguide. More... »

PAGES

680-684

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782609050261

DOI

http://dx.doi.org/10.1134/s1063782609050261

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021228103


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