Solar cells based on gallium antimonide View Full Text


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Article Info

DATE

2009-05-06

AUTHORS

V. M. Andreev, S. V. Sorokina, N. Kh. Timoshina, V. P. Khvostikov, M. Z. Shvarts

ABSTRACT

Liquid-phase epitaxy and diffusion from the gas phase have been used to create various kinds of GaSb-based solar cell structures intended for use in cascaded solar-radiation converters. A narrow-gap (GaSb) solar cell was studied in tandem based on a combination of semiconductors GaAs-GaSb (two p-n junctions) and GaInP/GaAs-GaSb (three p-n junctions). The maximum efficiency of photovoltaic conversion in GaSb behind the wide-gap cells is η = 6.5% (at sunlight concentration ratio of 275X, AM1.5D Low AOD spectrum). More... »

PAGES

668-671

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782609050236

DOI

http://dx.doi.org/10.1134/s1063782609050236

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031712508


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