2009-05-06
AUTHORSV. M. Andreev, S. V. Sorokina, N. Kh. Timoshina, V. P. Khvostikov, M. Z. Shvarts
ABSTRACTLiquid-phase epitaxy and diffusion from the gas phase have been used to create various kinds of GaSb-based solar cell structures intended for use in cascaded solar-radiation converters. A narrow-gap (GaSb) solar cell was studied in tandem based on a combination of semiconductors GaAs-GaSb (two p-n junctions) and GaInP/GaAs-GaSb (three p-n junctions). The maximum efficiency of photovoltaic conversion in GaSb behind the wide-gap cells is η = 6.5% (at sunlight concentration ratio of 275X, AM1.5D Low AOD spectrum). More... »
PAGES668-671
http://scigraph.springernature.com/pub.10.1134/s1063782609050236
DOIhttp://dx.doi.org/10.1134/s1063782609050236
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