Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC View Full Text


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Article Info

DATE

2009-05-06

AUTHORS

A. S. Potapov, P. A. Ivanov, T. P. Samsonova

ABSTRACT

Effect of annealing on the electrical properties of 50 nickel Schottky contacts formed on a single 4H-SiC wafer has been studied. It is shown that annealing at 200°C for 1 h favors homogenization of the metal-semiconductor heterointerface, which leads to a narrower scatter of such contact parameters as the ideality factor and effective barrier height. At higher annealing temperatures (350–450°C) the scatter of these parameters again increases; presumably, this occurs because of the local chemical interaction of nickel with silicon carbide. More... »

PAGES

612-616

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782609050145

DOI

http://dx.doi.org/10.1134/s1063782609050145

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045609165


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