High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings View Full Text


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Article Info

DATE

2009-04-28

AUTHORS

P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya, T. P. Samsonova, A. S. Potapov

ABSTRACT

Planar 4H-SiC p-n junctions with floating guard rings have been fabricated. The main junction and the rings were formed by room temperature boron implantation followed by high temperature annealing. The breakdown voltage of the p-n junctions is 1800 V, which twice exceeds that of similar junctions without guard rings and reaches 72% of the calculated breakdown voltage of a plane-parallel p-n junction with the same epitaxial layer parameters More... »

PAGES

505-507

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782609040186

DOI

http://dx.doi.org/10.1134/s1063782609040186

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1013476925


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