Metal-insulator transition in n-3C-SiC epitaxial films View Full Text


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Article Info

DATE

2009-03-11

AUTHORS

A. A. Lebedev, P. L. Abramov, N. V. Agrinskaya, V. I. Kozub, A. N. Kuznetsov, S. P. Lebedev, G. A. Oganesyan, A. S. Tregubova, A. V. Chernyaev, D. V. Shamshur, M. O. Skvortsova

ABSTRACT

n-Type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their doping level and structural perfection. It was found that a metal-insulator transition occurs in the n-3C-SiC layer at uncompensated donor concentrations Nd − Na ≤ 3 × 1017 cm−3. More... »

PAGES

318-322

References to SciGraph publications

  • 2007-10-11. Negative magnetoresistance in SiC heteropolytype junctions in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063782609030117

    DOI

    http://dx.doi.org/10.1134/s1063782609030117

    DIMENSIONS

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