Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature View Full Text


Ontology type: schema:ScholarlyArticle      Open Access: True


Article Info

DATE

2009-03-11

AUTHORS

D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, D. V. Shengurov, Yu. N. Drozdov, A. N. Yablonskiy, V. B. Shmagin, Z. F. Krasilnik, N. D. Zakharov, P. Werner

ABSTRACT

The electroluminescence (EL) of multilayered p-i-n structures with the self-assembled Ge(Si)/Si(001) islands are investigated. It is found that the structures with islands grown at 600°C have the highest intensity of the electroluminescence signal at room temperature in the wavelength range of 1.3–1.55 μm. The annealing of structures with the Ge(Si) islands leads to an increase in the EL-signal intensity at low temperatures and hampers the temperature stability of this signal, which is related to the additional Si diffusion into islands during annealing. The found considerable increase in the electroluminescence-signal intensity with the thickness of the separating Si layer is associated with a decrease in the elastic stresses in the structure with an increase in this layer’s thickness. The highest EL quantum efficiency in the wavelength range of 1.3–1.55 μm obtained in investigated structures amounted to 0.01% at room temperature. More... »

PAGES

313-317

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URI

http://scigraph.springernature.com/pub.10.1134/s1063782609030105

DOI

http://dx.doi.org/10.1134/s1063782609030105

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