Analysis of forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky barriers View Full Text


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Article Info

DATE

2009-02-10

AUTHORS

P. A. Ivanov, A. S. Potapov, T. P. Samsonova

ABSTRACT

Forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky contacts with an ideality factor n = 1.1–1.2 in the exponential portion of the characteristics have been analyzed. The nonideality was considered to be a result of the formation of a thin dielectric layer between the deposited titanium layer and 4H-SiC. The following electrical parameters of the contacts were determined from experimental current-voltage characteristics: energy barrier height, thickness of the intermediate dielectric layer, and energy distribution of the density of states at the insulator-semiconductor interface. More... »

PAGES

185-188

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782609020122

DOI

http://dx.doi.org/10.1134/s1063782609020122

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015964237


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