Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching View Full Text


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Article Info

DATE

2008-12-17

AUTHORS

M. Pociask, I. I. Izhnin, S. A. Dvoretsky, N. N. Mikhailov, Yu. G. Sidorov, V. S. Varavin, K. D. Mynbaev, V. I. Ivanov-Omskii

ABSTRACT

Electrical properties of MBE-grown n-HgCdTe layers, both undoped and In-doped during growth and modified by ion etching are studied. It is established that initially neutral defects with a concentration ∼1017 cm−3 are present in these structures. These defects are activated by ion etching and form donor centers. Comparison of the obtained experimental results with the published data shows that these defects are formed at the growth stage of the structures. After the ion etching is stopped, donor centers decompose and for ∼5 × 103 min, the electron concentration in the structures is stabilized. The obtained data allow one to determine the amount of indium necessary for the obtainment of reproducible electron concentration in n-type regions of HgCdTe-based LED structures formed by ion etching. More... »

PAGES

1413-1415

References to SciGraph publications

  • 2003-07. Time relaxation of point defects in p- and n-(HgCd)Te after ion milling in JOURNAL OF ELECTRONIC MATERIALS
  • 2007-11-15. The kinetics of conductivity type conversion in HgCdTe by ion beam milling in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063782608120075

    DOI

    http://dx.doi.org/10.1134/s1063782608120075

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