Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with ... View Full Text


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Article Info

DATE

2008-12-17

AUTHORS

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii

ABSTRACT

Low-frequency electrical capacitance of silicon crystals in the case of hopping migration of both electrons and bipolarons (electron pairs) via the defects of one type, which stabilizes the Fermi level near the midgap, is calculated. The crystals with two-level defects in three charge states (+1, 0, or −1) with a negative correlation energy are considered. It is shown that, as the absolute value of the external potential is increased, the capacitance of silicon containing defects with positive correlation energy increases, while that with defects with negative correlation energy decreases. The expression for the drift and diffusion components of current density for bipolarons hopping from defects with the charge state −1 to defects with the charge state +1 was derived for the first time. More... »

PAGES

1388

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782608120038

DOI

http://dx.doi.org/10.1134/s1063782608120038

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049781368


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