Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-09-30

AUTHORS

A. M. Nadtochiy, S. A. Blokhin, A. V. Sakharov, M. M. Kulagina, Yu. M. Zadiranov, N. Yu. Gordeev, M. V. Maksimov, V. M. Ustinov, N. N. Ledentsov, E. Stock, T. Warming, D. Bimberg

ABSTRACT

The effect of the excitation level on the intensity and width of whispering-gallery-mode (WGM) lines in microdisks with an asymmetric air/GaAs/AlGaO waveguide and an active region containing InAs quantum dots is studied using microphotoluminescence spectroscopy. At high pump levels, overheating of the active region takes place, which leads to a long-wavelength shift of the gain spectrum; in addition, the shape of the spectrum changes due to the saturation of the ground and excited states and to many-particle interactions. As a consequence, the behavior of intensities and linewidths of WGMs as functions of the optical-pump power density is determined by the spectral positions of the modes with respect to the gain peaks and may differ considerably for different modes. The long-wavelength shift of WGM lines caused by active-region overheating is partially compensated by a short-wavelength shift, which occurs due to the dependence of the effective refractive index of the waveguide on the concentration of free charge carriers. More... »

PAGES

1228-1233

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782608100151

DOI

http://dx.doi.org/10.1134/s1063782608100151

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1039835087


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