Pulsed breakdown of 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction View Full Text


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Article Info

DATE

2008-07-11

AUTHORS

P. A. Ivanov, I. V. Grekhov, A. S. Potapov, T. P. Samsonova

ABSTRACT

Pulsed reverse current-voltage characteristics have been measured in the breakdown region for 1-kV 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction. It was shown that the dynamic breakdown voltage of the diodes increases as the pulses become shorter. Owing to the homogeneous avalanche formation at the edge of the guard p-n junction and to the high differential resistance in the breakdown region, the diodes sustain without degradation a pulsed reverse voltage substantially exceeding the static breakdown threshold. Characteristic features of the pulsed breakdown are considered in relation to the specific properties of the boron-implanted guard p-n junction. More... »

PAGES

858

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782608070178

DOI

http://dx.doi.org/10.1134/s1063782608070178

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1033121734


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