Energy characteristics of excitons in structures based on InGaN alloys View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-06

AUTHORS

S. O. Usov, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, M. A. Sinitsyn, N. N. Ledentsov

ABSTRACT

Samples containing ultrathin InGaN layers that emit radiation in the spectral range from the ultraviolet to yellow region are studied. The samples are grown by metal-organic vapor-phase epitaxy. The Urbach energy, the localization energy of excitons, and the activation energy of charge carriers are determined to characterize radiative and nonradiative processes in the quantum dots and barriers of the structures. It is shown that these energy parameters are linearly dependent on the photon energy in the range from 3.05 to 2.12 eV. It is established that temperature variations in the emission intensity are due to the increase in the number of charge carriers thermally activated from the quantum wells into barriers as well as due to the enhancement of scattering of free excitons at defects. More... »

PAGES

720-725

Journal

TITLE

Semiconductors

ISSUE

6

VOLUME

42

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782608060146

DOI

http://dx.doi.org/10.1134/s1063782608060146

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1037860478


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