Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-05

AUTHORS

V. N. Jmerik, A. M. Mizerov, T. V. Shubina, D. S. Plotnikov, M. V. Zamoryanskaya, M. A. Yagovkina, Ya. V. Domracheva, A. A. Sitnikova, S. V. Ivanov

ABSTRACT

The processes leading to the formation of a spatially nonuniform distribution of indium in the InxGa1 − x N layers with x = 0−0.6 grown by molecular beam epitaxy with plasma activation of nitrogen at relatively low growth temperatures (590–630°C) are studied. It is found that at low values of x < 0.1, the growth proceeds pseudomorphically at least to a thickness of 70 nm, and these layers are characterized by a high uniformity of the In distribution, which confirms their thermodynamic stability. Upon increasing x up to ∼0.3, the signs of a nonuniform In distribution are observed, which is associated with the stress relaxation facilitating the development of phase separation. It is shown that layers with In distribution of lower uniformity feature more intense photoluminescence in the energy range 2.0–2.5 eV. For the layers with x = 0.6, complete phase separation is observed with the formation of several phases with a wide range of compositions, including the region in the vicinity of the InN binary compound. More... »

PAGES

616-623

References to SciGraph publications

Journal

TITLE

Semiconductors

ISSUE

5

VOLUME

42

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782608050229

DOI

http://dx.doi.org/10.1134/s1063782608050229

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1029355217


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