High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p+-n junctions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2008-01

AUTHORS

E. V. Kalinina, N. B. Strokan, A. M. Ivanov, A. A. Sitnikova, A. V. Sadokhin, A. Yu. Azarov, V. G. Kossov, R. R. Yafaev

ABSTRACT

Results obtained in a study of spectrometric characteristics of arrays of four detectors based on 4H-SiC ion-implantation-doped p+-n junctions in the temperature range 25–140 °C are reported for the first time. The junctions were fabricated by ion implantation of aluminum into epitaxial 4H-SiC layers of thickness ≤45 μm, grown by chemical vapor deposition with uncompensated donor concentration Nd − Na = (4–6) × 1014 cm−3. The structural features of the ion-implantation-doped p+-layers were studied by secondary-ion mass spectrometry, transmission electron microscopy, and Rutherford backscattering spectroscopy in the channeling mode. Parameters of the diode arrays were determined by testing in air with natural-decay alpha particles with an energy of 3.76 MeV. The previously obtained data for similar single detectors were experimentally confirmed: the basic characteristics of the detector arrays, the charge collection efficiency and energy resolution, are improved as the working temperature increases. More... »

PAGES

86-91

Journal

TITLE

Semiconductors

ISSUE

1

VOLUME

42

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782608010120

DOI

http://dx.doi.org/10.1134/s1063782608010120

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1041376096


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