Ontology type: schema:ScholarlyArticle
2007-11
AUTHORSN. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii
ABSTRACTThe static field effect and capacitance of Si crystals with hopping conductivity over defects in the charge states (+1), (0), and (−1), which pin the Fermi level, are calculated. In the Si band gap, the defects in the (0) and (+1) charge states form a v′ band, and in the charge states (−1) and (0), they form a c′ band. The width of the c′ and v′ energy bands is calculated under the assumption of Coulomb interaction of each charged defect with only the nearest ion. The energy gap between the c′ and v′ bands is assumed to be constant. Nonmonotonicity of the dependence of capacitance and surface hopping conductivity on the electric potential on the surface of the highly damaged Si crystals is predicted. More... »
PAGES1300-1306
http://scigraph.springernature.com/pub.10.1134/s1063782607110048
DOIhttp://dx.doi.org/10.1134/s1063782607110048
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1032777932
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[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Physical Sciences",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Condensed Matter Physics",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Quantum Physics",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "Belarussian State University, pr. Nezavisimosti 4, 22030, Minsk, Belarus",
"id": "http://www.grid.ac/institutes/grid.17678.3f",
"name": [
"Belarussian State University, pr. Nezavisimosti 4, 22030, Minsk, Belarus"
],
"type": "Organization"
},
"familyName": "Poklonski",
"givenName": "N. A.",
"id": "sg:person.015505352225.90",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015505352225.90"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Belarussian State University, pr. Nezavisimosti 4, 22030, Minsk, Belarus",
"id": "http://www.grid.ac/institutes/grid.17678.3f",
"name": [
"Belarussian State University, pr. Nezavisimosti 4, 22030, Minsk, Belarus"
],
"type": "Organization"
},
"familyName": "Vyrko",
"givenName": "S. A.",
"id": "sg:person.0742524034.73",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0742524034.73"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Zabrodskii",
"givenName": "A. G.",
"id": "sg:person.016623532707.36",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016623532707.36"
],
"type": "Person"
}
],
"citation": [
{
"id": "sg:pub.10.1007/978-3-642-81832-5",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1040944836",
"https://doi.org/10.1007/978-3-642-81832-5"
],
"type": "CreativeWork"
}
],
"datePublished": "2007-11",
"datePublishedReg": "2007-11-01",
"description": "The static field effect and capacitance of Si crystals with hopping conductivity over defects in the charge states (+1), (0), and (\u22121), which pin the Fermi level, are calculated. In the Si band gap, the defects in the (0) and (+1) charge states form a v\u2032 band, and in the charge states (\u22121) and (0), they form a c\u2032 band. The width of the c\u2032 and v\u2032 energy bands is calculated under the assumption of Coulomb interaction of each charged defect with only the nearest ion. The energy gap between the c\u2032 and v\u2032 bands is assumed to be constant. Nonmonotonicity of the dependence of capacitance and surface hopping conductivity on the electric potential on the surface of the highly damaged Si crystals is predicted.",
"genre": "article",
"id": "sg:pub.10.1134/s1063782607110048",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1136692",
"issn": [
"1063-7826",
"1090-6479"
],
"name": "Semiconductors",
"publisher": "Pleiades Publishing",
"type": "Periodical"
},
{
"issueNumber": "11",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "41"
}
],
"keywords": [
"Si crystals",
"V-band",
"Si band gap",
"dependence of capacitance",
"field effects",
"electric potential",
"capacitance",
"conductivity",
"point radiation defects",
"silicon crystals",
"band gap",
"radiation defects",
"Fermi level",
"charge state",
"surface",
"static field effects",
"energy gap",
"crystals",
"defects",
"band",
"nearest ions",
"energy bands",
"Coulomb interaction",
"width",
"gap",
"effect",
"dependence",
"Cs",
"ions",
"state",
"potential",
"assumption",
"interaction",
"levels",
"nonmonotonicity"
],
"name": "Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level",
"pagination": "1300-1306",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1032777932"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1134/s1063782607110048"
]
}
],
"sameAs": [
"https://doi.org/10.1134/s1063782607110048",
"https://app.dimensions.ai/details/publication/pub.1032777932"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-10T09:56",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220509/entities/gbq_results/article/article_451.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.1134/s1063782607110048"
}
]
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