Current-voltage characteristics of isotype SiC-SiC junctions fabricated by direct wafer bonding View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-08

AUTHORS

P. A. Ivanov, L. S. Kostina, A. S. Potapov, T. P. Samsonova, E. I. Belyakova, T. S. Argunova, I. V. Grekhov

ABSTRACT

Results obtained in a study of current-voltage characteristics of isotype SiC-SiC structures fabricated by direct bonding of single-crystal n-type 6H-SiC wafers with a donor concentration of ∼1016 cm−3 are presented. The initial wafer bonding was done in deionized water. To enhance the adhesion, the structure was thermally annealed at 1250°C. All the features of the current-voltage characteristics measured are consistently explained in terms of the hypothesis that the SiC-SiC interface is a variable-thickness channel filled with a native SiOx oxide of thickness 10–100 nm. The minimum experimentally measured differential resistance of the structure (6 Θ cm2) is limited by the current transport in the oxide layer, which occurs by the mechanism of space-charge-limited currents. More... »

PAGES

921-924

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782607080106

DOI

http://dx.doi.org/10.1134/s1063782607080106

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1002989553


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