Theory of stationary impact-ionization plane waves in semiconductors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-06

AUTHORS

A. S. Kyuregyan

ABSTRACT

General analytical theory of stationary impact-ionization plane waves in semiconductor devices with arbitrary electric-field dependence of drift velocities and impact-ionization coefficients of electrons and holes is developed. The formulas are obtained that describe the structure of the wave front and make it possible to calculate its main parameters (velocity, width, maximum electric field, concentration of charge carriers, and electric field behind the front) for given values of current density and doping level of the semiconductor. Limitations of the theory resulting from the disregard of the diffusion current and continuum approximation are considered. More... »

PAGES

737-743

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782607060243

DOI

http://dx.doi.org/10.1134/s1063782607060243

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1003777304


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "All-Russia Electrical Engineering Institute, 111250, Moscow, Russia", 
          "id": "http://www.grid.ac/institutes/grid.469895.f", 
          "name": [
            "All-Russia Electrical Engineering Institute, 111250, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kyuregyan", 
        "givenName": "A. S.", 
        "id": "sg:person.01204731551.81", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01204731551.81"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2007-06", 
    "datePublishedReg": "2007-06-01", 
    "description": "General analytical theory of stationary impact-ionization plane waves in semiconductor devices with arbitrary electric-field dependence of drift velocities and impact-ionization coefficients of electrons and holes is developed. The formulas are obtained that describe the structure of the wave front and make it possible to calculate its main parameters (velocity, width, maximum electric field, concentration of charge carriers, and electric field behind the front) for given values of current density and doping level of the semiconductor. Limitations of the theory resulting from the disregard of the diffusion current and continuum approximation are considered.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782607060243", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "41"
      }
    ], 
    "keywords": [
      "plane wave", 
      "electric field dependence", 
      "general analytical theory", 
      "impact ionization coefficients", 
      "drift velocity", 
      "analytical theory", 
      "continuum approximation", 
      "semiconductor devices", 
      "wave front", 
      "semiconductors", 
      "current density", 
      "main parameters", 
      "waves", 
      "theory", 
      "electrons", 
      "approximation", 
      "holes", 
      "dependence", 
      "formula", 
      "devices", 
      "density", 
      "velocity", 
      "diffusion", 
      "parameters", 
      "coefficient", 
      "front", 
      "structure", 
      "limitations", 
      "values", 
      "levels", 
      "disregard"
    ], 
    "name": "Theory of stationary impact-ionization plane waves in semiconductors", 
    "pagination": "737-743", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1003777304"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782607060243"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782607060243", 
      "https://app.dimensions.ai/details/publication/pub.1003777304"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-09-02T15:51", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220902/entities/gbq_results/article/article_446.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782607060243"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782607060243'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782607060243'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782607060243'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782607060243'


 

This table displays all metadata directly associated to this object as RDF triples.

92 TRIPLES      20 PREDICATES      57 URIs      48 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782607060243 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Nc2fc29ce43f2488990d241f31ea4e997
5 schema:datePublished 2007-06
6 schema:datePublishedReg 2007-06-01
7 schema:description General analytical theory of stationary impact-ionization plane waves in semiconductor devices with arbitrary electric-field dependence of drift velocities and impact-ionization coefficients of electrons and holes is developed. The formulas are obtained that describe the structure of the wave front and make it possible to calculate its main parameters (velocity, width, maximum electric field, concentration of charge carriers, and electric field behind the front) for given values of current density and doping level of the semiconductor. Limitations of the theory resulting from the disregard of the diffusion current and continuum approximation are considered.
8 schema:genre article
9 schema:isAccessibleForFree false
10 schema:isPartOf N4e5300af2ba745fdb0c5de5ec4ceade9
11 N92500e5a1daa42f88d0443f0f93c376d
12 sg:journal.1136692
13 schema:keywords analytical theory
14 approximation
15 coefficient
16 continuum approximation
17 current density
18 density
19 dependence
20 devices
21 diffusion
22 disregard
23 drift velocity
24 electric field dependence
25 electrons
26 formula
27 front
28 general analytical theory
29 holes
30 impact ionization coefficients
31 levels
32 limitations
33 main parameters
34 parameters
35 plane wave
36 semiconductor devices
37 semiconductors
38 structure
39 theory
40 values
41 velocity
42 wave front
43 waves
44 schema:name Theory of stationary impact-ionization plane waves in semiconductors
45 schema:pagination 737-743
46 schema:productId N8a52b0ec19ae4bd3b74707a0e64c9b2f
47 Nfeb638603b2d448894ee52b6f85ee59a
48 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003777304
49 https://doi.org/10.1134/s1063782607060243
50 schema:sdDatePublished 2022-09-02T15:51
51 schema:sdLicense https://scigraph.springernature.com/explorer/license/
52 schema:sdPublisher Nca33d7d5fa1248b6b339a1fffaa0b6c2
53 schema:url https://doi.org/10.1134/s1063782607060243
54 sgo:license sg:explorer/license/
55 sgo:sdDataset articles
56 rdf:type schema:ScholarlyArticle
57 N4e5300af2ba745fdb0c5de5ec4ceade9 schema:issueNumber 6
58 rdf:type schema:PublicationIssue
59 N8a52b0ec19ae4bd3b74707a0e64c9b2f schema:name dimensions_id
60 schema:value pub.1003777304
61 rdf:type schema:PropertyValue
62 N92500e5a1daa42f88d0443f0f93c376d schema:volumeNumber 41
63 rdf:type schema:PublicationVolume
64 Nc2fc29ce43f2488990d241f31ea4e997 rdf:first sg:person.01204731551.81
65 rdf:rest rdf:nil
66 Nca33d7d5fa1248b6b339a1fffaa0b6c2 schema:name Springer Nature - SN SciGraph project
67 rdf:type schema:Organization
68 Nfeb638603b2d448894ee52b6f85ee59a schema:name doi
69 schema:value 10.1134/s1063782607060243
70 rdf:type schema:PropertyValue
71 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
72 schema:name Physical Sciences
73 rdf:type schema:DefinedTerm
74 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
75 schema:name Condensed Matter Physics
76 rdf:type schema:DefinedTerm
77 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
78 schema:name Quantum Physics
79 rdf:type schema:DefinedTerm
80 sg:journal.1136692 schema:issn 1063-7826
81 1090-6479
82 schema:name Semiconductors
83 schema:publisher Pleiades Publishing
84 rdf:type schema:Periodical
85 sg:person.01204731551.81 schema:affiliation grid-institutes:grid.469895.f
86 schema:familyName Kyuregyan
87 schema:givenName A. S.
88 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01204731551.81
89 rdf:type schema:Person
90 grid-institutes:grid.469895.f schema:alternateName All-Russia Electrical Engineering Institute, 111250, Moscow, Russia
91 schema:name All-Russia Electrical Engineering Institute, 111250, Moscow, Russia
92 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...