High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-06

AUTHORS

V. M. Lantratov, N. A. Kalyuzhnyĭ, S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts, V. M. Andreev

ABSTRACT

Monolithic dual-junction GaInP/GaAs solar cells grown by the MOCVD method were studied. The conditions of the growth of ternary GaxIn1−xP and AlxIn1−xP alloys lattice-matched to GaAs are optimized. Technology for fabrication of a tunneling diode with a high peak current density of 207 A/cm2 on the basis of heavily doped n++-GaAs:Si and p++-AlGaAs:C layers is developed. Cascade GaInP/GaAs solar cells obtained as a result of relevant studies featuring a good efficiency of the solar-energy conversion both for space and terrestrial applications. The maximum value of the GaInP/GaAs solar-cell efficiency was 30.03% (at AM1.5D, 40 suns). More... »

PAGES

727-731

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378260706022x

DOI

http://dx.doi.org/10.1134/s106378260706022x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1012232985


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