Structural and electrical properties of the GexSi1−x/Si heterojunctions obtained by the method of direct bonding View Full Text


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Article Info

DATE

2007-06

AUTHORS

T. S. Argunova, E. I. Belyakova, I. V. Grekhov, A. G. Zabrodskiĭ, L. S. Kostina, L. M. Sorokin, N. M. Shmidt, J. M. Yi, J. W. Jung, J. H. Je, N. V. Abrosimov

ABSTRACT

The results of studying the structural and electrical properties of structures produced by the method of direct bonding of GexSi1−x and Si wafers are reported. The wafers were cut from the crystals grown by the Czochralski method. Continuity of the interface and the crystal-lattice defects were studied by X-ray methods using synchrotron radiation and by scanning electron microscopy. Measurements of the forward and reverse current-voltage characteristics of the p-GexSi1−x/n-Si diodes made it possible to assess the effect of the crystallattice defects on the electrical properties of heterojunctions. Satisfactory electrical parameters suggest that the technology of direct bonding is promising for the fabrication of large-area GexSi1−x/Si heterojunctions. More... »

PAGES

679

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782607060127

DOI

http://dx.doi.org/10.1134/s1063782607060127

DIMENSIONS

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168 schema:name Institute of Crystal Growth, 12489, Berlin, Germany
169 Institute of Problems in Microelectronics Technology and Ultrahigh-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Russia
170 rdf:type schema:Organization
171 grid-institutes:grid.49100.3c schema:alternateName Department of Materials Science and Engineering, Pohang University of Science and Technology, 790-784, Pohang, Republic of Korea
172 schema:name Department of Materials Science and Engineering, Pohang University of Science and Technology, 790-784, Pohang, Republic of Korea
173 Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
174 rdf:type schema:Organization
 




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