Vacancy kinetics in heteropolytype epitaxy of SiC View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-06

AUTHORS

S. Yu. Davydov, A. A. Lebedev

ABSTRACT

A model of the transformation of SiC polytypes in the course of growth of an epitaxial layer is suggested. The model is based on the variation with time of the concentrations of carbon and silicon vacancies in the transition layer. A relationship between the lifetimes of these vacancies is obtained in terms of the model. More... »

PAGES

621-624

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782607060012

DOI

http://dx.doi.org/10.1134/s1063782607060012

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1012067336


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