Low-temperature (77 K) impurity breakdown in p-type 4H-SiC View Full Text


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Article Info

DATE

2007-05

AUTHORS

I. V. Grekhov, P. A. Ivanov, A. S. Potapov, T. P. Samsonova

ABSTRACT

The impact ionization of acceptors in aluminum-doped 4H-SiC epitaxial films (Al concentration 2 × 1015 cm−3) at a temperature of 77 K is studied. It is found that the impact-ionization coefficient exponentially depends on the reverse electric field: αp = α*pexp(−F*/F). The largest ionization coefficient is α*p = 7.1 × 106 cm−3 s−1, and the threshold field is F* = 2.9 × 104 V/cm. More... »

PAGES

542-545

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782607050120

DOI

http://dx.doi.org/10.1134/s1063782607050120

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1032816048


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