Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-04

AUTHORS

E. Kolesnikova, M. Mynbaeva, A. Sitnikova

ABSTRACT

Plain-view bright-field transmission electron microscopy and cathodoluminescence are used to study the defect structure of GaN films grown by hydride vapor-phase epitaxy on porous and nonporous SiC substrates. It is shown that the use of porous substrate reduces the mosaic structure of the films. This finding supports the compliance of porous SiC substrates, which was proposed by the authors earlier. More... »

PAGES

387-390

References to SciGraph publications

Journal

TITLE

Semiconductors

ISSUE

4

VOLUME

41

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782607040045

DOI

http://dx.doi.org/10.1134/s1063782607040045

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1024991674


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kolesnikova", 
        "givenName": "E.", 
        "id": "sg:person.015736326723.69", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015736326723.69"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mynbaeva", 
        "givenName": "M.", 
        "id": "sg:person.07660667737.36", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07660667737.36"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sitnikova", 
        "givenName": "A.", 
        "id": "sg:person.015133024650.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015133024650.23"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/s11664-003-0200-5", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1002192799", 
          "https://doi.org/10.1007/s11664-003-0200-5"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s11664-003-0200-5", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1002192799", 
          "https://doi.org/10.1007/s11664-003-0200-5"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/pssc.200461365", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014165958"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1023/b:inet.0000038392.08043.d6", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038605180", 
          "https://doi.org/10.1023/b:inet.0000038392.08043.d6"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.2045345", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040208726", 
          "https://doi.org/10.1134/1.2045345"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.2045345", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040208726", 
          "https://doi.org/10.1134/1.2045345"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.116756", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057680967"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.1589513", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062168738"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2007-04", 
    "datePublishedReg": "2007-04-01", 
    "description": "Plain-view bright-field transmission electron microscopy and cathodoluminescence are used to study the defect structure of GaN films grown by hydride vapor-phase epitaxy on porous and nonporous SiC substrates. It is shown that the use of porous substrate reduces the mosaic structure of the films. This finding supports the compliance of porous SiC substrates, which was proposed by the authors earlier.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782607040045", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "41"
      }
    ], 
    "name": "Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates", 
    "pagination": "387-390", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "770f19b2389e0f09543e2239806f6ad4de198a97144f824c64e531d53d7afa3f"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782607040045"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1024991674"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782607040045", 
      "https://app.dimensions.ai/details/publication/pub.1024991674"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T17:30", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8672_00000505.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134%2FS1063782607040045"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782607040045'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782607040045'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782607040045'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782607040045'


 

This table displays all metadata directly associated to this object as RDF triples.

96 TRIPLES      21 PREDICATES      33 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782607040045 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author N6fdd0f9e99924a5990d685991ce86c84
4 schema:citation sg:pub.10.1007/s11664-003-0200-5
5 sg:pub.10.1023/b:inet.0000038392.08043.d6
6 sg:pub.10.1134/1.2045345
7 https://doi.org/10.1002/pssc.200461365
8 https://doi.org/10.1063/1.116756
9 https://doi.org/10.1116/1.1589513
10 schema:datePublished 2007-04
11 schema:datePublishedReg 2007-04-01
12 schema:description Plain-view bright-field transmission electron microscopy and cathodoluminescence are used to study the defect structure of GaN films grown by hydride vapor-phase epitaxy on porous and nonporous SiC substrates. It is shown that the use of porous substrate reduces the mosaic structure of the films. This finding supports the compliance of porous SiC substrates, which was proposed by the authors earlier.
13 schema:genre research_article
14 schema:inLanguage en
15 schema:isAccessibleForFree false
16 schema:isPartOf N4409cb51ef514fabad17d7e16e8ffdcb
17 Nf48d7f2879aa4cb689512960a747ffd7
18 sg:journal.1136692
19 schema:name Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates
20 schema:pagination 387-390
21 schema:productId N04954c0c2cf04230bd6fda5e16209506
22 N5671bda1082242d19153cd2d72abfe7a
23 Nb3aa79bd7a6446f2a5e1c3793e7e25b4
24 schema:sameAs https://app.dimensions.ai/details/publication/pub.1024991674
25 https://doi.org/10.1134/s1063782607040045
26 schema:sdDatePublished 2019-04-10T17:30
27 schema:sdLicense https://scigraph.springernature.com/explorer/license/
28 schema:sdPublisher Nc59b5579707c47aeac46ce5eda25e3bb
29 schema:url http://link.springer.com/10.1134%2FS1063782607040045
30 sgo:license sg:explorer/license/
31 sgo:sdDataset articles
32 rdf:type schema:ScholarlyArticle
33 N04954c0c2cf04230bd6fda5e16209506 schema:name readcube_id
34 schema:value 770f19b2389e0f09543e2239806f6ad4de198a97144f824c64e531d53d7afa3f
35 rdf:type schema:PropertyValue
36 N4409cb51ef514fabad17d7e16e8ffdcb schema:issueNumber 4
37 rdf:type schema:PublicationIssue
38 N5671bda1082242d19153cd2d72abfe7a schema:name dimensions_id
39 schema:value pub.1024991674
40 rdf:type schema:PropertyValue
41 N6fdd0f9e99924a5990d685991ce86c84 rdf:first sg:person.015736326723.69
42 rdf:rest Ne8f7f1a5a1f44ab481c21d81a28668a1
43 N717b38f100a24ba2931b166068e7441b rdf:first sg:person.015133024650.23
44 rdf:rest rdf:nil
45 Nb3aa79bd7a6446f2a5e1c3793e7e25b4 schema:name doi
46 schema:value 10.1134/s1063782607040045
47 rdf:type schema:PropertyValue
48 Nc59b5579707c47aeac46ce5eda25e3bb schema:name Springer Nature - SN SciGraph project
49 rdf:type schema:Organization
50 Ne8f7f1a5a1f44ab481c21d81a28668a1 rdf:first sg:person.07660667737.36
51 rdf:rest N717b38f100a24ba2931b166068e7441b
52 Nf48d7f2879aa4cb689512960a747ffd7 schema:volumeNumber 41
53 rdf:type schema:PublicationVolume
54 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
55 schema:name Physical Sciences
56 rdf:type schema:DefinedTerm
57 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
58 schema:name Other Physical Sciences
59 rdf:type schema:DefinedTerm
60 sg:journal.1136692 schema:issn 1063-7826
61 1090-6479
62 schema:name Semiconductors
63 rdf:type schema:Periodical
64 sg:person.015133024650.23 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
65 schema:familyName Sitnikova
66 schema:givenName A.
67 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015133024650.23
68 rdf:type schema:Person
69 sg:person.015736326723.69 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
70 schema:familyName Kolesnikova
71 schema:givenName E.
72 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015736326723.69
73 rdf:type schema:Person
74 sg:person.07660667737.36 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
75 schema:familyName Mynbaeva
76 schema:givenName M.
77 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07660667737.36
78 rdf:type schema:Person
79 sg:pub.10.1007/s11664-003-0200-5 schema:sameAs https://app.dimensions.ai/details/publication/pub.1002192799
80 https://doi.org/10.1007/s11664-003-0200-5
81 rdf:type schema:CreativeWork
82 sg:pub.10.1023/b:inet.0000038392.08043.d6 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038605180
83 https://doi.org/10.1023/b:inet.0000038392.08043.d6
84 rdf:type schema:CreativeWork
85 sg:pub.10.1134/1.2045345 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040208726
86 https://doi.org/10.1134/1.2045345
87 rdf:type schema:CreativeWork
88 https://doi.org/10.1002/pssc.200461365 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014165958
89 rdf:type schema:CreativeWork
90 https://doi.org/10.1063/1.116756 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057680967
91 rdf:type schema:CreativeWork
92 https://doi.org/10.1116/1.1589513 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062168738
93 rdf:type schema:CreativeWork
94 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
95 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
96 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...