A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-03

AUTHORS

A. A. Lebedev, V. V. Zelenin, P. L. Abramov, E. V. Bogdanova, S. P. Lebedev, D. K. Nel’son, B. S. Razbirin, M. P. Shcheglov, A. S. Tregubova, M. Suvajarvi, R. Yakimova

ABSTRACT

3C-SiC epitaxial layers with a thickness of up to 100 µm were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3–0.5 cm2 and uncompensated donor concentration Nd − Na ∼ (1017–1018) cm−3 were produced at maximum growth rates of up to 200 µm/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv ≈ 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices. More... »

PAGES

263-265

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782607030037

DOI

http://dx.doi.org/10.1134/s1063782607030037

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1019875837


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "A. A.", 
        "id": "sg:person.011264364575.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zelenin", 
        "givenName": "V. V.", 
        "id": "sg:person.015156023643.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015156023643.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Abramov", 
        "givenName": "P. L.", 
        "id": "sg:person.016031634412.67", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016031634412.67"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bogdanova", 
        "givenName": "E. V.", 
        "id": "sg:person.012556446371.01", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012556446371.01"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "S. P.", 
        "id": "sg:person.012160272645.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012160272645.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nel\u2019son", 
        "givenName": "D. K.", 
        "id": "sg:person.012221652427.98", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012221652427.98"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Razbirin", 
        "givenName": "B. S.", 
        "id": "sg:person.011465367275.36", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011465367275.36"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shcheglov", 
        "givenName": "M. P.", 
        "id": "sg:person.010346162345.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010346162345.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tregubova", 
        "givenName": "A. S.", 
        "id": "sg:person.014577536705.39", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014577536705.39"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Department of Physics, Chemistry and Biology, Linkoping University, SE-58183, Linkoping, Sweden", 
          "id": "http://www.grid.ac/institutes/grid.5640.7", 
          "name": [
            "Department of Physics, Chemistry and Biology, Linkoping University, SE-58183, Linkoping, Sweden"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Suvajarvi", 
        "givenName": "M.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Department of Physics, Chemistry and Biology, Linkoping University, SE-58183, Linkoping, Sweden", 
          "id": "http://www.grid.ac/institutes/grid.5640.7", 
          "name": [
            "Department of Physics, Chemistry and Biology, Linkoping University, SE-58183, Linkoping, Sweden"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yakimova", 
        "givenName": "R.", 
        "id": "sg:person.01351372043.79", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01351372043.79"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2007-03", 
    "datePublishedReg": "2007-03-01", 
    "description": "Abstract3C-SiC epitaxial layers with a thickness of up to 100 \u00b5m were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3\u20130.5 cm2 and uncompensated donor concentration Nd \u2212 Na \u223c (1017\u20131018) cm\u22123 were produced at maximum growth rates of up to 200 \u00b5m/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv \u2248 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782607030037", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "41"
      }
    ], 
    "keywords": [
      "epitaxial layers", 
      "sublimation epitaxy", 
      "type epitaxial layer", 
      "donor concentration ND", 
      "layer", 
      "electronic devices", 
      "hexagonal substrate", 
      "substrate", 
      "epitaxy", 
      "vacuum", 
      "concentration Nd", 
      "maximum growth rate", 
      "ray analysis", 
      "photoluminescence spectra", 
      "HV", 
      "thickness", 
      "range 0.3", 
      "cm2", 
      "rate", 
      "polytypes", 
      "PL spectra", 
      "devices", 
      "study", 
      "Nd", 
      "Na", 
      "growth rate", 
      "inclusion", 
      "area", 
      "analysis", 
      "spectra", 
      "band", 
      "detail", 
      "recombination band", 
      "Abstract3C-SiC epitaxial layers", 
      "uncompensated donor concentration Nd", 
      "donor-acceptor recombination band", 
      "thick 3C-SiC epitaxial layers"
    ], 
    "name": "A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum", 
    "pagination": "263-265", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1019875837"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782607030037"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782607030037", 
      "https://app.dimensions.ai/details/publication/pub.1019875837"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-11-01T18:10", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_446.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782607030037"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

171 TRIPLES      21 PREDICATES      64 URIs      55 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782607030037 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N6c23243e425d4148bd70ca17b8e69786
5 schema:datePublished 2007-03
6 schema:datePublishedReg 2007-03-01
7 schema:description Abstract3C-SiC epitaxial layers with a thickness of up to 100 µm were grown on 6H-SiC hexagonal substrates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3–0.5 cm2 and uncompensated donor concentration Nd − Na ∼ (1017–1018) cm−3 were produced at maximum growth rates of up to 200 µm/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv ≈ 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices.
8 schema:genre article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N8770fa8c8bfe41bb9f92d258a8dcbbd2
12 Nd3624754510b49c5842c0c97ea6cbd0b
13 sg:journal.1136692
14 schema:keywords Abstract3C-SiC epitaxial layers
15 HV
16 Na
17 Nd
18 PL spectra
19 analysis
20 area
21 band
22 cm2
23 concentration Nd
24 detail
25 devices
26 donor concentration ND
27 donor-acceptor recombination band
28 electronic devices
29 epitaxial layers
30 epitaxy
31 growth rate
32 hexagonal substrate
33 inclusion
34 layer
35 maximum growth rate
36 photoluminescence spectra
37 polytypes
38 range 0.3
39 rate
40 ray analysis
41 recombination band
42 spectra
43 study
44 sublimation epitaxy
45 substrate
46 thick 3C-SiC epitaxial layers
47 thickness
48 type epitaxial layer
49 uncompensated donor concentration Nd
50 vacuum
51 schema:name A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
52 schema:pagination 263-265
53 schema:productId N23e7a999119341c88d8f03def56c1d17
54 Nd4543f832f0741b7a20b3ca0557c4b4f
55 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019875837
56 https://doi.org/10.1134/s1063782607030037
57 schema:sdDatePublished 2021-11-01T18:10
58 schema:sdLicense https://scigraph.springernature.com/explorer/license/
59 schema:sdPublisher Na07655afbd4344f29c64c48550b294c3
60 schema:url https://doi.org/10.1134/s1063782607030037
61 sgo:license sg:explorer/license/
62 sgo:sdDataset articles
63 rdf:type schema:ScholarlyArticle
64 N23e7a999119341c88d8f03def56c1d17 schema:name doi
65 schema:value 10.1134/s1063782607030037
66 rdf:type schema:PropertyValue
67 N3360e474380542ff904351818ef8e6ae rdf:first sg:person.01351372043.79
68 rdf:rest rdf:nil
69 N5556fcb8156b49ea83d919cde047f609 rdf:first sg:person.012221652427.98
70 rdf:rest Nb840cfcb06da4a328aea2191a4e2c220
71 N6328c396117344c4ad60b5c8ff653c15 rdf:first sg:person.014577536705.39
72 rdf:rest N6bb6a1da87c14f938c8c7fb50bcb9f1b
73 N6bb6a1da87c14f938c8c7fb50bcb9f1b rdf:first Nec0a8b8a54694be1b0e8859e385394af
74 rdf:rest N3360e474380542ff904351818ef8e6ae
75 N6c23243e425d4148bd70ca17b8e69786 rdf:first sg:person.011264364575.18
76 rdf:rest N8399813d4cd54e97b650ce5e12a9869d
77 N808448bbf74c45f3836aeb9d087da70c rdf:first sg:person.012160272645.18
78 rdf:rest N5556fcb8156b49ea83d919cde047f609
79 N817196062ea34880875013aec2c0939b rdf:first sg:person.016031634412.67
80 rdf:rest Nf90edb4f293f432a8281e62c916b1658
81 N8399813d4cd54e97b650ce5e12a9869d rdf:first sg:person.015156023643.08
82 rdf:rest N817196062ea34880875013aec2c0939b
83 N8770fa8c8bfe41bb9f92d258a8dcbbd2 schema:volumeNumber 41
84 rdf:type schema:PublicationVolume
85 N8c834cfd08e64e32b5b4aa8d86b4fa0e rdf:first sg:person.010346162345.53
86 rdf:rest N6328c396117344c4ad60b5c8ff653c15
87 Na07655afbd4344f29c64c48550b294c3 schema:name Springer Nature - SN SciGraph project
88 rdf:type schema:Organization
89 Nb840cfcb06da4a328aea2191a4e2c220 rdf:first sg:person.011465367275.36
90 rdf:rest N8c834cfd08e64e32b5b4aa8d86b4fa0e
91 Nd3624754510b49c5842c0c97ea6cbd0b schema:issueNumber 3
92 rdf:type schema:PublicationIssue
93 Nd4543f832f0741b7a20b3ca0557c4b4f schema:name dimensions_id
94 schema:value pub.1019875837
95 rdf:type schema:PropertyValue
96 Nec0a8b8a54694be1b0e8859e385394af schema:affiliation grid-institutes:grid.5640.7
97 schema:familyName Suvajarvi
98 schema:givenName M.
99 rdf:type schema:Person
100 Nf90edb4f293f432a8281e62c916b1658 rdf:first sg:person.012556446371.01
101 rdf:rest N808448bbf74c45f3836aeb9d087da70c
102 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
103 schema:name Physical Sciences
104 rdf:type schema:DefinedTerm
105 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
106 schema:name Condensed Matter Physics
107 rdf:type schema:DefinedTerm
108 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
109 schema:name Quantum Physics
110 rdf:type schema:DefinedTerm
111 sg:journal.1136692 schema:issn 1063-7826
112 1090-6479
113 schema:name Semiconductors
114 schema:publisher Pleiades Publishing
115 rdf:type schema:Periodical
116 sg:person.010346162345.53 schema:affiliation grid-institutes:grid.423485.c
117 schema:familyName Shcheglov
118 schema:givenName M. P.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010346162345.53
120 rdf:type schema:Person
121 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.423485.c
122 schema:familyName Lebedev
123 schema:givenName A. A.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
125 rdf:type schema:Person
126 sg:person.011465367275.36 schema:affiliation grid-institutes:grid.423485.c
127 schema:familyName Razbirin
128 schema:givenName B. S.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011465367275.36
130 rdf:type schema:Person
131 sg:person.012160272645.18 schema:affiliation grid-institutes:grid.423485.c
132 schema:familyName Lebedev
133 schema:givenName S. P.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012160272645.18
135 rdf:type schema:Person
136 sg:person.012221652427.98 schema:affiliation grid-institutes:grid.423485.c
137 schema:familyName Nel’son
138 schema:givenName D. K.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012221652427.98
140 rdf:type schema:Person
141 sg:person.012556446371.01 schema:affiliation grid-institutes:grid.423485.c
142 schema:familyName Bogdanova
143 schema:givenName E. V.
144 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012556446371.01
145 rdf:type schema:Person
146 sg:person.01351372043.79 schema:affiliation grid-institutes:grid.5640.7
147 schema:familyName Yakimova
148 schema:givenName R.
149 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01351372043.79
150 rdf:type schema:Person
151 sg:person.014577536705.39 schema:affiliation grid-institutes:grid.423485.c
152 schema:familyName Tregubova
153 schema:givenName A. S.
154 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014577536705.39
155 rdf:type schema:Person
156 sg:person.015156023643.08 schema:affiliation grid-institutes:grid.423485.c
157 schema:familyName Zelenin
158 schema:givenName V. V.
159 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015156023643.08
160 rdf:type schema:Person
161 sg:person.016031634412.67 schema:affiliation grid-institutes:grid.423485.c
162 schema:familyName Abramov
163 schema:givenName P. L.
164 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016031634412.67
165 rdf:type schema:Person
166 grid-institutes:grid.423485.c schema:alternateName Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
167 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
168 rdf:type schema:Organization
169 grid-institutes:grid.5640.7 schema:alternateName Department of Physics, Chemistry and Biology, Linkoping University, SE-58183, Linkoping, Sweden
170 schema:name Department of Physics, Chemistry and Biology, Linkoping University, SE-58183, Linkoping, Sweden
171 rdf:type schema:Organization
 




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