Resonances related to an array of InAs quantum dots and controlled by an external electric field View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-02

AUTHORS

V. G. Talalaev, B. V. Novikov, A. S. Sokolov, I. V. Strom, J. W. Tomm, N. D. Zakharov, P. Werner, G. E. Cirlin, A. A. Tonkikh

ABSTRACT

Photoluminescence of multilayer structures with InAs quantum dots grown in the p-n junction in GaAs by molecular-beam epitaxy is studied. Formation of vertical columns of quantum dots is verified by the data of transmission electron microscopy. It is shown that a natural increase in the size of quantum dots from layer to layer brings about their vertical coalescence at the upper part of a column. An unbalance of electronic levels caused by the enlargement of quantum dots was compensated by an external electric field, so that the resonance of ground electronic states in the column was attained. The onset of resonances was checked by the methods of steady-state and time-resolved photoluminescence. It is shown that, in the case of a resonance, the photoluminescence intensity and the radiative lifetime of excitons increase (up to 0.6–2 ns), while the time of tunneling of charge carriers becomes shorter (shorter than 150 ps). Outside the resonances, tunneling of electrons is appreciably enhanced owing to the involvement of longitudinal optical phonons. If only these phonons are involved, the time of nonresonance tunneling between quantum dots becomes shorter than the time of relaxation of charge carriers from the barrier (100 and 140 ps, respectively). More... »

PAGES

197-204

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782607020169

DOI

http://dx.doi.org/10.1134/s1063782607020169

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1007570863


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