Effect of thermal annealing on the sensitivity of Si-based MOS diodes to reducing gases View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-12

AUTHORS

V. I. Balyuba, V. Yu. Gritsyk, T. A. Davydova, V. M. Kalygina, S. S. Nazarov, A. V. Panin, L. S. Khludkova

ABSTRACT

We study the effect of thermal annealing in the range of 200–610°C on the sensitivity and time dependences of the response of the Pd-SiO2-n-Si diodes to hydrogen and ammonia. The postannealing surface of a Pd electrode was examined using atomic force microscopy. The high-frequency C-V characteristics were measured in air and gas mixtures H2-air and NH3-air. It is shown that, after annealing at 200°C for 10 min, the response of diode capacitance to hydrogen is higher than that to ammonia. After annealing at 300°C and higher, the sensitivity of MOS diodes to hydrogen nearly vanishes. The response to ammonia still remains high, although it gradually weakens as the annealing temperature is increased. A decrease in sensitivity of the Pd-SiO2-n-Si diodes to ammonia with increasing temperature is attributed to worsening of the electrical characteristics of the Pd electrode. More... »

PAGES

1436-1441

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606120128

DOI

http://dx.doi.org/10.1134/s1063782606120128

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1014739379


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0306", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Chemistry (incl. Structural)", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/03", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Chemical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "name": [
            "Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Balyuba", 
        "givenName": "V. I.", 
        "id": "sg:person.011612012302.49", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011612012302.49"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gritsyk", 
        "givenName": "V. Yu.", 
        "id": "sg:person.014577714302.55", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014577714302.55"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Davydova", 
        "givenName": "T. A.", 
        "id": "sg:person.014122330017.66", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014122330017.66"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kalygina", 
        "givenName": "V. M.", 
        "id": "sg:person.012205123042.40", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012205123042.40"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nazarov", 
        "givenName": "S. S.", 
        "id": "sg:person.07740613400.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07740613400.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Strength Physics and Materials Science", 
          "id": "https://www.grid.ac/institutes/grid.467103.7", 
          "name": [
            "Institute of Strength Physics and Materials Science, Siberian Division, Russian Academy of Sciences, 634021, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Panin", 
        "givenName": "A. V.", 
        "id": "sg:person.014616167505.66", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014616167505.66"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Khludkova", 
        "givenName": "L. S.", 
        "id": "sg:person.012726515400.00", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012726515400.00"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0250-6874(87)80075-6", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1003130772"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0250-6874(88)80026-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1005193124"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0925-4005(01)00984-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1005971135"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0925-4005(01)00969-8", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1015169471"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0925-4005(03)00228-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1030946109"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0925-4005(03)00228-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1030946109"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0250-6874(86)80056-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1031685415"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0925-4005(02)00073-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042487360"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0250-6874(87)85006-0", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1049028764"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.335693", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057940823"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.360688", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057983952"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2006-12", 
    "datePublishedReg": "2006-12-01", 
    "description": "We study the effect of thermal annealing in the range of 200\u2013610\u00b0C on the sensitivity and time dependences of the response of the Pd-SiO2-n-Si diodes to hydrogen and ammonia. The postannealing surface of a Pd electrode was examined using atomic force microscopy. The high-frequency C-V characteristics were measured in air and gas mixtures H2-air and NH3-air. It is shown that, after annealing at 200\u00b0C for 10 min, the response of diode capacitance to hydrogen is higher than that to ammonia. After annealing at 300\u00b0C and higher, the sensitivity of MOS diodes to hydrogen nearly vanishes. The response to ammonia still remains high, although it gradually weakens as the annealing temperature is increased. A decrease in sensitivity of the Pd-SiO2-n-Si diodes to ammonia with increasing temperature is attributed to worsening of the electrical characteristics of the Pd electrode.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782606120128", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "12", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "40"
      }
    ], 
    "name": "Effect of thermal annealing on the sensitivity of Si-based MOS diodes to reducing gases", 
    "pagination": "1436-1441", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "4638d384aad010309fc7e58bc10d836de0f61fe35fb2b3463b90ca3b8d73b29b"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782606120128"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1014739379"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782606120128", 
      "https://app.dimensions.ai/details/publication/pub.1014739379"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T14:07", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8660_00000504.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134%2FS1063782606120128"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

145 TRIPLES      21 PREDICATES      37 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782606120128 schema:about anzsrc-for:03
2 anzsrc-for:0306
3 schema:author N9f570246f743487c9298c4689f0ca155
4 schema:citation https://doi.org/10.1016/0250-6874(86)80056-7
5 https://doi.org/10.1016/0250-6874(87)80075-6
6 https://doi.org/10.1016/0250-6874(87)85006-0
7 https://doi.org/10.1016/0250-6874(88)80026-x
8 https://doi.org/10.1016/s0925-4005(01)00969-8
9 https://doi.org/10.1016/s0925-4005(01)00984-4
10 https://doi.org/10.1016/s0925-4005(02)00073-4
11 https://doi.org/10.1016/s0925-4005(03)00228-4
12 https://doi.org/10.1063/1.335693
13 https://doi.org/10.1063/1.360688
14 schema:datePublished 2006-12
15 schema:datePublishedReg 2006-12-01
16 schema:description We study the effect of thermal annealing in the range of 200–610°C on the sensitivity and time dependences of the response of the Pd-SiO2-n-Si diodes to hydrogen and ammonia. The postannealing surface of a Pd electrode was examined using atomic force microscopy. The high-frequency C-V characteristics were measured in air and gas mixtures H2-air and NH3-air. It is shown that, after annealing at 200°C for 10 min, the response of diode capacitance to hydrogen is higher than that to ammonia. After annealing at 300°C and higher, the sensitivity of MOS diodes to hydrogen nearly vanishes. The response to ammonia still remains high, although it gradually weakens as the annealing temperature is increased. A decrease in sensitivity of the Pd-SiO2-n-Si diodes to ammonia with increasing temperature is attributed to worsening of the electrical characteristics of the Pd electrode.
17 schema:genre research_article
18 schema:inLanguage en
19 schema:isAccessibleForFree false
20 schema:isPartOf N048d5e84d0584f7f954d68fc978946db
21 N9ca0e9c9833043f8ac6141de6a7912b0
22 sg:journal.1136692
23 schema:name Effect of thermal annealing on the sensitivity of Si-based MOS diodes to reducing gases
24 schema:pagination 1436-1441
25 schema:productId N4a1d29d59f344b5e91fab6ec8cd7c04e
26 N77d402e7b96c4e9fb100b841e2f25183
27 Nc4fc3f8fea454c01854953da7b2bd7e7
28 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014739379
29 https://doi.org/10.1134/s1063782606120128
30 schema:sdDatePublished 2019-04-10T14:07
31 schema:sdLicense https://scigraph.springernature.com/explorer/license/
32 schema:sdPublisher N4b0fd7e5d43c4f3eb04efcede37bdf26
33 schema:url http://link.springer.com/10.1134%2FS1063782606120128
34 sgo:license sg:explorer/license/
35 sgo:sdDataset articles
36 rdf:type schema:ScholarlyArticle
37 N048d5e84d0584f7f954d68fc978946db schema:issueNumber 12
38 rdf:type schema:PublicationIssue
39 N1453af02c89d4276b7265f2de83ccc1c schema:name Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia
40 rdf:type schema:Organization
41 N3c243468c7da4edaa519e6a5cc0b0ea5 rdf:first sg:person.012205123042.40
42 rdf:rest N536269c3fc4148e381fe4729746c35a6
43 N45e996dbacef45758b37fe1b2639fcda rdf:first sg:person.014122330017.66
44 rdf:rest N3c243468c7da4edaa519e6a5cc0b0ea5
45 N4a1d29d59f344b5e91fab6ec8cd7c04e schema:name doi
46 schema:value 10.1134/s1063782606120128
47 rdf:type schema:PropertyValue
48 N4b0fd7e5d43c4f3eb04efcede37bdf26 schema:name Springer Nature - SN SciGraph project
49 rdf:type schema:Organization
50 N4ba1cb51e8d2408d82116797aa05fe33 rdf:first sg:person.014577714302.55
51 rdf:rest N45e996dbacef45758b37fe1b2639fcda
52 N51bb973a336a4614b4d4af194f7365f9 schema:name Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia
53 rdf:type schema:Organization
54 N536269c3fc4148e381fe4729746c35a6 rdf:first sg:person.07740613400.90
55 rdf:rest N70d25c3791c34871850196c65c91d810
56 N70d25c3791c34871850196c65c91d810 rdf:first sg:person.014616167505.66
57 rdf:rest Nfd655191e2b44eccbf5e58dde04ad4e9
58 N77d402e7b96c4e9fb100b841e2f25183 schema:name dimensions_id
59 schema:value pub.1014739379
60 rdf:type schema:PropertyValue
61 N8f2ce6251ba042fd96b60b322c7a9cab schema:name Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia
62 rdf:type schema:Organization
63 N9ca0e9c9833043f8ac6141de6a7912b0 schema:volumeNumber 40
64 rdf:type schema:PublicationVolume
65 N9f570246f743487c9298c4689f0ca155 rdf:first sg:person.011612012302.49
66 rdf:rest N4ba1cb51e8d2408d82116797aa05fe33
67 Na026b94feb6e4d88b102f37929816f02 schema:name Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia
68 rdf:type schema:Organization
69 Nb6e95bb6277144e787cac8f638d7eec8 schema:name Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia
70 rdf:type schema:Organization
71 Nb80096034b4c46eda484662425c28ba3 schema:name Kuznetsov Physicotechnical Institute, pl. Revolyutsii 1, 634050, Tomsk, Russia
72 rdf:type schema:Organization
73 Nc4fc3f8fea454c01854953da7b2bd7e7 schema:name readcube_id
74 schema:value 4638d384aad010309fc7e58bc10d836de0f61fe35fb2b3463b90ca3b8d73b29b
75 rdf:type schema:PropertyValue
76 Nfd655191e2b44eccbf5e58dde04ad4e9 rdf:first sg:person.012726515400.00
77 rdf:rest rdf:nil
78 anzsrc-for:03 schema:inDefinedTermSet anzsrc-for:
79 schema:name Chemical Sciences
80 rdf:type schema:DefinedTerm
81 anzsrc-for:0306 schema:inDefinedTermSet anzsrc-for:
82 schema:name Physical Chemistry (incl. Structural)
83 rdf:type schema:DefinedTerm
84 sg:journal.1136692 schema:issn 1063-7826
85 1090-6479
86 schema:name Semiconductors
87 rdf:type schema:Periodical
88 sg:person.011612012302.49 schema:affiliation N1453af02c89d4276b7265f2de83ccc1c
89 schema:familyName Balyuba
90 schema:givenName V. I.
91 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011612012302.49
92 rdf:type schema:Person
93 sg:person.012205123042.40 schema:affiliation N51bb973a336a4614b4d4af194f7365f9
94 schema:familyName Kalygina
95 schema:givenName V. M.
96 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012205123042.40
97 rdf:type schema:Person
98 sg:person.012726515400.00 schema:affiliation N8f2ce6251ba042fd96b60b322c7a9cab
99 schema:familyName Khludkova
100 schema:givenName L. S.
101 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012726515400.00
102 rdf:type schema:Person
103 sg:person.014122330017.66 schema:affiliation Nb80096034b4c46eda484662425c28ba3
104 schema:familyName Davydova
105 schema:givenName T. A.
106 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014122330017.66
107 rdf:type schema:Person
108 sg:person.014577714302.55 schema:affiliation Nb6e95bb6277144e787cac8f638d7eec8
109 schema:familyName Gritsyk
110 schema:givenName V. Yu.
111 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014577714302.55
112 rdf:type schema:Person
113 sg:person.014616167505.66 schema:affiliation https://www.grid.ac/institutes/grid.467103.7
114 schema:familyName Panin
115 schema:givenName A. V.
116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014616167505.66
117 rdf:type schema:Person
118 sg:person.07740613400.90 schema:affiliation Na026b94feb6e4d88b102f37929816f02
119 schema:familyName Nazarov
120 schema:givenName S. S.
121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07740613400.90
122 rdf:type schema:Person
123 https://doi.org/10.1016/0250-6874(86)80056-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031685415
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1016/0250-6874(87)80075-6 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003130772
126 rdf:type schema:CreativeWork
127 https://doi.org/10.1016/0250-6874(87)85006-0 schema:sameAs https://app.dimensions.ai/details/publication/pub.1049028764
128 rdf:type schema:CreativeWork
129 https://doi.org/10.1016/0250-6874(88)80026-x schema:sameAs https://app.dimensions.ai/details/publication/pub.1005193124
130 rdf:type schema:CreativeWork
131 https://doi.org/10.1016/s0925-4005(01)00969-8 schema:sameAs https://app.dimensions.ai/details/publication/pub.1015169471
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1016/s0925-4005(01)00984-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1005971135
134 rdf:type schema:CreativeWork
135 https://doi.org/10.1016/s0925-4005(02)00073-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042487360
136 rdf:type schema:CreativeWork
137 https://doi.org/10.1016/s0925-4005(03)00228-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1030946109
138 rdf:type schema:CreativeWork
139 https://doi.org/10.1063/1.335693 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057940823
140 rdf:type schema:CreativeWork
141 https://doi.org/10.1063/1.360688 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057983952
142 rdf:type schema:CreativeWork
143 https://www.grid.ac/institutes/grid.467103.7 schema:alternateName Institute of Strength Physics and Materials Science
144 schema:name Institute of Strength Physics and Materials Science, Siberian Division, Russian Academy of Sciences, 634021, Tomsk, Russia
145 rdf:type schema:Organization
 




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