Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-10

AUTHORS

S. A. Blokhin, A. V. Sakharov, N. A. Maleev, A. G. Kuz’menkov, I. I. Novikov, N. Yu. Gordeev, Yu. M. Shernyakov, M. V. Maximov, V. M. Ustinov, A. R. Kovsh, S. Mikhrin, N. N. Ledentsov, G. Lee, J. Y. Chi

ABSTRACT

Temperature dependence of the threshold current for VCSELs based on submonolayer InGaAs QDs is studied experimentally. It is shown that detuning between the lasing wavelength and the gain spectrum peak must be used for a correct description of the temperature characteristics of laser diodes. An expression for describing the temperature dependence of the VCSEL threshold current is proposed, which takes into account not only the reduction of the maximum gain of the active region with rising temperature, but also the effect of the temperature dependence of detuning. More... »

PAGES

1232-1236

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606100198

DOI

http://dx.doi.org/10.1134/s1063782606100198

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1034311959


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Blokhin", 
        "givenName": "S. A.", 
        "id": "sg:person.015244136173.28", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015244136173.28"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sakharov", 
        "givenName": "A. V.", 
        "id": "sg:person.010201114167.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Maleev", 
        "givenName": "N. A.", 
        "id": "sg:person.011317077151.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011317077151.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kuz\u2019menkov", 
        "givenName": "A. G.", 
        "id": "sg:person.011175376051.42", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011175376051.42"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Novikov", 
        "givenName": "I. I.", 
        "id": "sg:person.014364551677.84", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014364551677.84"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gordeev", 
        "givenName": "N. Yu.", 
        "id": "sg:person.010536465737.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010536465737.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shernyakov", 
        "givenName": "Yu. M.", 
        "id": "sg:person.014411372640.54", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014411372640.54"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Maximov", 
        "givenName": "M. V.", 
        "id": "sg:person.015106205514.66", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015106205514.66"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ustinov", 
        "givenName": "V. M.", 
        "id": "sg:person.010616411412.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "NL-Nanosemiconductors GmbH, Dortmund, 44227, Germany", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "NL-Nanosemiconductors GmbH, Dortmund, 44227, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kovsh", 
        "givenName": "A. R.", 
        "id": "sg:person.015513600271.76", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015513600271.76"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "NL-Nanosemiconductors GmbH, Dortmund, 44227, Germany", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "NL-Nanosemiconductors GmbH, Dortmund, 44227, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mikhrin", 
        "givenName": "S.", 
        "id": "sg:person.013673575155.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013673575155.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ledentsov", 
        "givenName": "N. N.", 
        "id": "sg:person.014140400702.37", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014140400702.37"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Industrial Technology Research Institute, 310, Chutung, Hsinchu, Taiwan, Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.418030.e", 
          "name": [
            "Industrial Technology Research Institute, 310, Chutung, Hsinchu, Taiwan, Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lee", 
        "givenName": "G.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Industrial Technology Research Institute, 310, Chutung, Hsinchu, Taiwan, Republic of China", 
          "id": "http://www.grid.ac/institutes/grid.418030.e", 
          "name": [
            "Industrial Technology Research Institute, 310, Chutung, Hsinchu, Taiwan, Republic of China"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chi", 
        "givenName": "J. Y.", 
        "id": "sg:person.015450770043.80", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015450770043.80"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2006-10", 
    "datePublishedReg": "2006-10-01", 
    "description": "Temperature dependence of the threshold current for VCSELs based on submonolayer InGaAs QDs is studied experimentally. It is shown that detuning between the lasing wavelength and the gain spectrum peak must be used for a correct description of the temperature characteristics of laser diodes. An expression for describing the temperature dependence of the VCSEL threshold current is proposed, which takes into account not only the reduction of the maximum gain of the active region with rising temperature, but also the effect of the temperature dependence of detuning.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782606100198", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "10", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "40"
      }
    ], 
    "keywords": [
      "threshold current", 
      "InGaAs QDs", 
      "temperature dependence", 
      "temperature characteristics", 
      "laser diode", 
      "experimental study", 
      "VCSEL", 
      "maximum gain", 
      "active region", 
      "spectrum peak", 
      "current", 
      "threshold characteristics", 
      "diodes", 
      "QDs", 
      "dependence", 
      "correct description", 
      "temperature", 
      "characteristics", 
      "wavelength", 
      "peak", 
      "reduction", 
      "account", 
      "gain", 
      "effect", 
      "description", 
      "region", 
      "study", 
      "expression"
    ], 
    "name": "Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs", 
    "pagination": "1232-1236", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1034311959"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782606100198"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782606100198", 
      "https://app.dimensions.ai/details/publication/pub.1034311959"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-12-01T06:25", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221201/entities/gbq_results/article/article_412.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782606100198"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

185 TRIPLES      20 PREDICATES      54 URIs      45 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782606100198 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N49c35aff10a74b0d903ec90019021318
5 schema:datePublished 2006-10
6 schema:datePublishedReg 2006-10-01
7 schema:description Temperature dependence of the threshold current for VCSELs based on submonolayer InGaAs QDs is studied experimentally. It is shown that detuning between the lasing wavelength and the gain spectrum peak must be used for a correct description of the temperature characteristics of laser diodes. An expression for describing the temperature dependence of the VCSEL threshold current is proposed, which takes into account not only the reduction of the maximum gain of the active region with rising temperature, but also the effect of the temperature dependence of detuning.
8 schema:genre article
9 schema:isAccessibleForFree false
10 schema:isPartOf N07b20bb3c7ad40ebb2224e1feb29d487
11 N0afbf078bb7e4a5082a6ea7a5bb83070
12 sg:journal.1136692
13 schema:keywords InGaAs QDs
14 QDs
15 VCSEL
16 account
17 active region
18 characteristics
19 correct description
20 current
21 dependence
22 description
23 diodes
24 effect
25 experimental study
26 expression
27 gain
28 laser diode
29 maximum gain
30 peak
31 reduction
32 region
33 spectrum peak
34 study
35 temperature
36 temperature characteristics
37 temperature dependence
38 threshold characteristics
39 threshold current
40 wavelength
41 schema:name Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs
42 schema:pagination 1232-1236
43 schema:productId N8c296a6af6c74e2e97680b5759e04045
44 Nb1c8acb58f3c4bad8299b877539eaaaf
45 schema:sameAs https://app.dimensions.ai/details/publication/pub.1034311959
46 https://doi.org/10.1134/s1063782606100198
47 schema:sdDatePublished 2022-12-01T06:25
48 schema:sdLicense https://scigraph.springernature.com/explorer/license/
49 schema:sdPublisher Nfd5bb6881a7941d9af4c1478dacfa3e4
50 schema:url https://doi.org/10.1134/s1063782606100198
51 sgo:license sg:explorer/license/
52 sgo:sdDataset articles
53 rdf:type schema:ScholarlyArticle
54 N07b20bb3c7ad40ebb2224e1feb29d487 schema:issueNumber 10
55 rdf:type schema:PublicationIssue
56 N0afbf078bb7e4a5082a6ea7a5bb83070 schema:volumeNumber 40
57 rdf:type schema:PublicationVolume
58 N0fad10294c4147e68fc1e1e1e6466ea6 rdf:first sg:person.010616411412.30
59 rdf:rest N7ad588c3c22f4ab890262d66012269e3
60 N400973cc21494799a3fe0dd223b203eb rdf:first sg:person.014140400702.37
61 rdf:rest N85143bc175b442d898491a60aae40441
62 N49c35aff10a74b0d903ec90019021318 rdf:first sg:person.015244136173.28
63 rdf:rest Nb12d2e55f99749b59039bb07bd137a13
64 N562ba07d8a324a06b91685bae9eb6413 rdf:first sg:person.011175376051.42
65 rdf:rest Ne62d5989c38f4d3c8e6f81e2774f51f7
66 N70893b1a5ca54a45bf568cf0cb0c067c rdf:first sg:person.013673575155.33
67 rdf:rest N400973cc21494799a3fe0dd223b203eb
68 N7ad588c3c22f4ab890262d66012269e3 rdf:first sg:person.015513600271.76
69 rdf:rest N70893b1a5ca54a45bf568cf0cb0c067c
70 N85143bc175b442d898491a60aae40441 rdf:first Nbde74275147647f98d0ec8a49fb33ba0
71 rdf:rest N9fb4e99a29f1450badd845d71983dd77
72 N8c296a6af6c74e2e97680b5759e04045 schema:name doi
73 schema:value 10.1134/s1063782606100198
74 rdf:type schema:PropertyValue
75 N967677de79894617a5cb4e31139d6ba7 rdf:first sg:person.015106205514.66
76 rdf:rest N0fad10294c4147e68fc1e1e1e6466ea6
77 N97140f454513497c9ddae26d0a4df3f7 rdf:first sg:person.014411372640.54
78 rdf:rest N967677de79894617a5cb4e31139d6ba7
79 N9fb4e99a29f1450badd845d71983dd77 rdf:first sg:person.015450770043.80
80 rdf:rest rdf:nil
81 Nb12d2e55f99749b59039bb07bd137a13 rdf:first sg:person.010201114167.20
82 rdf:rest Nfa0a3ab9c3b14b1089a858aefc6ce6d2
83 Nb1c8acb58f3c4bad8299b877539eaaaf schema:name dimensions_id
84 schema:value pub.1034311959
85 rdf:type schema:PropertyValue
86 Nbde74275147647f98d0ec8a49fb33ba0 schema:affiliation grid-institutes:grid.418030.e
87 schema:familyName Lee
88 schema:givenName G.
89 rdf:type schema:Person
90 Nd17c9367647245c79be3ee5f809889c2 rdf:first sg:person.010536465737.08
91 rdf:rest N97140f454513497c9ddae26d0a4df3f7
92 Ne62d5989c38f4d3c8e6f81e2774f51f7 rdf:first sg:person.014364551677.84
93 rdf:rest Nd17c9367647245c79be3ee5f809889c2
94 Nfa0a3ab9c3b14b1089a858aefc6ce6d2 rdf:first sg:person.011317077151.34
95 rdf:rest N562ba07d8a324a06b91685bae9eb6413
96 Nfd5bb6881a7941d9af4c1478dacfa3e4 schema:name Springer Nature - SN SciGraph project
97 rdf:type schema:Organization
98 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
99 schema:name Physical Sciences
100 rdf:type schema:DefinedTerm
101 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
102 schema:name Condensed Matter Physics
103 rdf:type schema:DefinedTerm
104 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
105 schema:name Quantum Physics
106 rdf:type schema:DefinedTerm
107 sg:journal.1136692 schema:issn 1063-7826
108 1090-6479
109 schema:name Semiconductors
110 schema:publisher Pleiades Publishing
111 rdf:type schema:Periodical
112 sg:person.010201114167.20 schema:affiliation grid-institutes:grid.423485.c
113 schema:familyName Sakharov
114 schema:givenName A. V.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20
116 rdf:type schema:Person
117 sg:person.010536465737.08 schema:affiliation grid-institutes:grid.423485.c
118 schema:familyName Gordeev
119 schema:givenName N. Yu.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010536465737.08
121 rdf:type schema:Person
122 sg:person.010616411412.30 schema:affiliation grid-institutes:grid.423485.c
123 schema:familyName Ustinov
124 schema:givenName V. M.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30
126 rdf:type schema:Person
127 sg:person.011175376051.42 schema:affiliation grid-institutes:grid.423485.c
128 schema:familyName Kuz’menkov
129 schema:givenName A. G.
130 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011175376051.42
131 rdf:type schema:Person
132 sg:person.011317077151.34 schema:affiliation grid-institutes:grid.423485.c
133 schema:familyName Maleev
134 schema:givenName N. A.
135 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011317077151.34
136 rdf:type schema:Person
137 sg:person.013673575155.33 schema:affiliation grid-institutes:None
138 schema:familyName Mikhrin
139 schema:givenName S.
140 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013673575155.33
141 rdf:type schema:Person
142 sg:person.014140400702.37 schema:affiliation grid-institutes:grid.423485.c
143 schema:familyName Ledentsov
144 schema:givenName N. N.
145 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014140400702.37
146 rdf:type schema:Person
147 sg:person.014364551677.84 schema:affiliation grid-institutes:grid.423485.c
148 schema:familyName Novikov
149 schema:givenName I. I.
150 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014364551677.84
151 rdf:type schema:Person
152 sg:person.014411372640.54 schema:affiliation grid-institutes:grid.423485.c
153 schema:familyName Shernyakov
154 schema:givenName Yu. M.
155 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014411372640.54
156 rdf:type schema:Person
157 sg:person.015106205514.66 schema:affiliation grid-institutes:grid.423485.c
158 schema:familyName Maximov
159 schema:givenName M. V.
160 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015106205514.66
161 rdf:type schema:Person
162 sg:person.015244136173.28 schema:affiliation grid-institutes:grid.423485.c
163 schema:familyName Blokhin
164 schema:givenName S. A.
165 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015244136173.28
166 rdf:type schema:Person
167 sg:person.015450770043.80 schema:affiliation grid-institutes:grid.418030.e
168 schema:familyName Chi
169 schema:givenName J. Y.
170 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015450770043.80
171 rdf:type schema:Person
172 sg:person.015513600271.76 schema:affiliation grid-institutes:None
173 schema:familyName Kovsh
174 schema:givenName A. R.
175 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015513600271.76
176 rdf:type schema:Person
177 grid-institutes:None schema:alternateName NL-Nanosemiconductors GmbH, Dortmund, 44227, Germany
178 schema:name NL-Nanosemiconductors GmbH, Dortmund, 44227, Germany
179 rdf:type schema:Organization
180 grid-institutes:grid.418030.e schema:alternateName Industrial Technology Research Institute, 310, Chutung, Hsinchu, Taiwan, Republic of China
181 schema:name Industrial Technology Research Institute, 310, Chutung, Hsinchu, Taiwan, Republic of China
182 rdf:type schema:Organization
183 grid-institutes:grid.423485.c schema:alternateName Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
184 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
185 rdf:type schema:Organization
 




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