Oxidative-gravimetric porosimetry of macroporous silicon View Full Text


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Article Info

DATE

2006-10

AUTHORS

A. A. Nechitaĭlov, E. V. Astrova, Yu. A. Kukushkina, S. Yu. Kameneva

ABSTRACT

A simple nondestructive method to find the internal surface area, porosity, pore diameter, and pore density in macroporous silicon with through channels is suggested and tested. The porosity p is determined from the mass loss upon anodizing, and the surface area per unit volume, Sv, from the mass of SiO2 formed on the pore surface upon thermal oxidation. The relations are given for calculation of the average pore diameter d and pore density N from the obtained Sv and p. Dependences of the specific surface area and porosity on the resistivity of initial n-Si in the range ρ = 3–25 Θ cm have been studied for samples with ordered and self-organized “lattices” of macropores. The obtained values are within the limits p = 27–50%, Sv = 2800–6000 cm2/cm3, d = 1.9–6.5 μm, and N = 1.4−10 × 106 cm−2, in agreement with the data fumished by microscopy. More... »

PAGES

1222-1226

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606100174

DOI

http://dx.doi.org/10.1134/s1063782606100174

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021878645


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