Magnetic ordering in crystalline Si implanted with Co ions with intermediate doses View Full Text


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Article Info

DATE

2006-10

AUTHORS

N. A. Poklonskiĭ, N. M. Lapchuk, A. O. Korobko

ABSTRACT

Crystalline Si implanted with the 380-keV cobalt ions with the dose Φ = 1014−1016 cm−2 is studied. The method of Rutherford backscattering is used to determine the Si amorphization threshold (Φ = 3 × 1014 cm−2). A quasi-resonance anisotropic line with a width of approximately 170 mT is observed at a temperature of T = 78 K in the spectrum of the electron spin resonance of silicon implanted with Co+ ions with Φ ≥ 3 × 1014) cm−2. A resonance signal of paramagnetic centers in amorphous Si regions (g = 2.0057 and δB = 0.74 mT) is observed against the background of the above line. A quasi-resonance line of the electron spin resonance related to Co atoms and intrinsic Si defects was not observed at T = 300 K. More... »

PAGES

1151-1154

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606100058

DOI

http://dx.doi.org/10.1134/s1063782606100058

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1007087353


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