Room-temperature 1.3-μm lasing in a microdisk with quantum dots View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-09

AUTHORS

N. V. Kryzhanovskaya, S. A. Blokhin, A. G. Gladyshev, N. A. Maleev, A. G. Kuz’menkov, E. M. Arakcheeva, E. M. Tanklevskaya, A. E. Zhukov, A. P. Vasil’ev, E. S. Semenova, M. V. Maximov, N. N. Ledentsov, V. M. Ustinov, E. Stock, D. Bimberg

ABSTRACT

Under study are temperature dependences of laser characteristics of a GaAs/(AlGa)xOy microdisk of 6 μm in diameter, fabricated using optical lithography, ion milling with a beam of Ar+ ions, and selective oxidation of the Al0.97Ga0.03As layer which forms the microdisk base. In As/InGaAs QDs are used as the microdisk active region. Room-temperature lasing in the 1.3-μm range is observed, with the threshold optical pumping power of 160 μW. The quality factor of microdisk modes is about 104. More... »

PAGES

1101-1104

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378260609020x

DOI

http://dx.doi.org/10.1134/s106378260609020x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1046363056


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