Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively ... View Full Text


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Article Info

DATE

2006-07

AUTHORS

A. V. Boĭtsov, N. A. Bert, Yu. G. Musikhin, V. V. Chaldyshev, M. A. Yagovkina, V. V. Preobrazhenskiĭ, M. A. Putyato, B. R. Semyagin

ABSTRACT

Transmitting electron microscopy and X-ray diffractometry are used to study the GaAs layers undoped or doped uniformly with phosphorus (2.3 mol %) and grown at a temperature of 250°C and then annealed isochronously at 400, 500, 600, or 700°C. It is ascertained that doping with phosphorus reduces the amount of excess arsenic captured in the layer in the course of growth and also brings about a retardation of precipitation during subsequent annealing. The concentration of excess arsenic in undoped samples amounted to ∼0.2 at %; clusters were observed after annealing at a temperature of 500°C. The concentration of excess arsenic amounted to 0.1 at % in the samples containing phosphorus; in this case, the clusters were observed only after a heat treatment at 600°C. The average size of clusters in doped samples is smaller than that in undoped samples at the same heat-treatment temperatures. More... »

PAGES

758-762

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606070025

DOI

http://dx.doi.org/10.1134/s1063782606070025

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004751489


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bo\u012dtsov", 
        "givenName": "A. V.", 
        "id": "sg:person.012430167015.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012430167015.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bert", 
        "givenName": "N. A.", 
        "id": "sg:person.010314101551.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010314101551.02"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Musikhin", 
        "givenName": "Yu. G.", 
        "id": "sg:person.014603755431.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Chaldyshev", 
        "givenName": "V. V.", 
        "id": "sg:person.010716755351.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yagovkina", 
        "givenName": "M. A.", 
        "id": "sg:person.016026355533.82", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016026355533.82"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Preobrazhenski\u012d", 
        "givenName": "V. V.", 
        "id": "sg:person.010664106542.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Putyato", 
        "givenName": "M. A.", 
        "id": "sg:person.014730523656.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014730523656.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Semiconductor Physics", 
          "id": "https://www.grid.ac/institutes/grid.450314.7", 
          "name": [
            "Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent\u2019eva 13, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Semyagin", 
        "givenName": "B. R.", 
        "id": "sg:person.011644303155.87", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0022-0248(91)90943-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016682839"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0022-0248(91)90943-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016682839"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.101229", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057648813"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.105729", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057653298"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.113519", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057662240"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.114782", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057676124"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.119091", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057683281"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.120115", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057684297"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/55.2046", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061187636"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1364/ao.42.001726", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1065118026"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2006-07", 
    "datePublishedReg": "2006-07-01", 
    "description": "Transmitting electron microscopy and X-ray diffractometry are used to study the GaAs layers undoped or doped uniformly with phosphorus (2.3 mol %) and grown at a temperature of 250\u00b0C and then annealed isochronously at 400, 500, 600, or 700\u00b0C. It is ascertained that doping with phosphorus reduces the amount of excess arsenic captured in the layer in the course of growth and also brings about a retardation of precipitation during subsequent annealing. The concentration of excess arsenic in undoped samples amounted to \u223c0.2 at %; clusters were observed after annealing at a temperature of 500\u00b0C. The concentration of excess arsenic amounted to 0.1 at % in the samples containing phosphorus; in this case, the clusters were observed only after a heat treatment at 600\u00b0C. The average size of clusters in doped samples is smaller than that in undoped samples at the same heat-treatment temperatures.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782606070025", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "40"
      }
    ], 
    "name": "Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature", 
    "pagination": "758-762", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "16a3f2e60a22f402be54a7c405efc637e5dc41cc0dffee1af60963384eb453e7"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782606070025"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1004751489"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782606070025", 
      "https://app.dimensions.ai/details/publication/pub.1004751489"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T15:49", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8664_00000503.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134%2FS1063782606070025"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

140 TRIPLES      21 PREDICATES      36 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782606070025 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N9d9529d0ebe442ac9d55fe3c6525a61c
4 schema:citation https://doi.org/10.1016/0022-0248(91)90943-y
5 https://doi.org/10.1063/1.101229
6 https://doi.org/10.1063/1.105729
7 https://doi.org/10.1063/1.113519
8 https://doi.org/10.1063/1.114782
9 https://doi.org/10.1063/1.119091
10 https://doi.org/10.1063/1.120115
11 https://doi.org/10.1109/55.2046
12 https://doi.org/10.1364/ao.42.001726
13 schema:datePublished 2006-07
14 schema:datePublishedReg 2006-07-01
15 schema:description Transmitting electron microscopy and X-ray diffractometry are used to study the GaAs layers undoped or doped uniformly with phosphorus (2.3 mol %) and grown at a temperature of 250°C and then annealed isochronously at 400, 500, 600, or 700°C. It is ascertained that doping with phosphorus reduces the amount of excess arsenic captured in the layer in the course of growth and also brings about a retardation of precipitation during subsequent annealing. The concentration of excess arsenic in undoped samples amounted to ∼0.2 at %; clusters were observed after annealing at a temperature of 500°C. The concentration of excess arsenic amounted to 0.1 at % in the samples containing phosphorus; in this case, the clusters were observed only after a heat treatment at 600°C. The average size of clusters in doped samples is smaller than that in undoped samples at the same heat-treatment temperatures.
16 schema:genre research_article
17 schema:inLanguage en
18 schema:isAccessibleForFree false
19 schema:isPartOf N539fc3b973cd4996b5754d82ab2f00e8
20 N59e83ee7af734c3795a5fa626279cf63
21 sg:journal.1136692
22 schema:name Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature
23 schema:pagination 758-762
24 schema:productId N07098a3a3a5a46e1b7cdf6f05c57f00a
25 N34f55720c7f1473da202270195208fb8
26 Nfe0d8b34b0e34ea182681852b791202b
27 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004751489
28 https://doi.org/10.1134/s1063782606070025
29 schema:sdDatePublished 2019-04-10T15:49
30 schema:sdLicense https://scigraph.springernature.com/explorer/license/
31 schema:sdPublisher N121c9b515d874f01b2215280cf5ffcf1
32 schema:url http://link.springer.com/10.1134%2FS1063782606070025
33 sgo:license sg:explorer/license/
34 sgo:sdDataset articles
35 rdf:type schema:ScholarlyArticle
36 N07098a3a3a5a46e1b7cdf6f05c57f00a schema:name doi
37 schema:value 10.1134/s1063782606070025
38 rdf:type schema:PropertyValue
39 N0cc041d2c9e343639680bd5bb5d74dd3 rdf:first sg:person.010664106542.73
40 rdf:rest Ne71b172b46c64da5b57b01db9418fdd8
41 N121c9b515d874f01b2215280cf5ffcf1 schema:name Springer Nature - SN SciGraph project
42 rdf:type schema:Organization
43 N34f55720c7f1473da202270195208fb8 schema:name dimensions_id
44 schema:value pub.1004751489
45 rdf:type schema:PropertyValue
46 N398b5c2d15f041a1aead2e3593b3176e rdf:first sg:person.010716755351.29
47 rdf:rest N4bdd76520fba44649eb84ac235a72a50
48 N3a23b7e018424a688ad48889e0b9fd58 rdf:first sg:person.014603755431.88
49 rdf:rest N398b5c2d15f041a1aead2e3593b3176e
50 N4583789e912849efbcae6599a3c6bc82 rdf:first sg:person.011644303155.87
51 rdf:rest rdf:nil
52 N4bdd76520fba44649eb84ac235a72a50 rdf:first sg:person.016026355533.82
53 rdf:rest N0cc041d2c9e343639680bd5bb5d74dd3
54 N539fc3b973cd4996b5754d82ab2f00e8 schema:volumeNumber 40
55 rdf:type schema:PublicationVolume
56 N59e83ee7af734c3795a5fa626279cf63 schema:issueNumber 7
57 rdf:type schema:PublicationIssue
58 N9d9529d0ebe442ac9d55fe3c6525a61c rdf:first sg:person.012430167015.10
59 rdf:rest Nabda436f92904d05a160cb70f6feeddd
60 Nabda436f92904d05a160cb70f6feeddd rdf:first sg:person.010314101551.02
61 rdf:rest N3a23b7e018424a688ad48889e0b9fd58
62 Ne71b172b46c64da5b57b01db9418fdd8 rdf:first sg:person.014730523656.90
63 rdf:rest N4583789e912849efbcae6599a3c6bc82
64 Nfe0d8b34b0e34ea182681852b791202b schema:name readcube_id
65 schema:value 16a3f2e60a22f402be54a7c405efc637e5dc41cc0dffee1af60963384eb453e7
66 rdf:type schema:PropertyValue
67 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
68 schema:name Engineering
69 rdf:type schema:DefinedTerm
70 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
71 schema:name Materials Engineering
72 rdf:type schema:DefinedTerm
73 sg:journal.1136692 schema:issn 1063-7826
74 1090-6479
75 schema:name Semiconductors
76 rdf:type schema:Periodical
77 sg:person.010314101551.02 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
78 schema:familyName Bert
79 schema:givenName N. A.
80 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010314101551.02
81 rdf:type schema:Person
82 sg:person.010664106542.73 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
83 schema:familyName Preobrazhenskiĭ
84 schema:givenName V. V.
85 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010664106542.73
86 rdf:type schema:Person
87 sg:person.010716755351.29 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
88 schema:familyName Chaldyshev
89 schema:givenName V. V.
90 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010716755351.29
91 rdf:type schema:Person
92 sg:person.011644303155.87 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
93 schema:familyName Semyagin
94 schema:givenName B. R.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011644303155.87
96 rdf:type schema:Person
97 sg:person.012430167015.10 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
98 schema:familyName Boĭtsov
99 schema:givenName A. V.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012430167015.10
101 rdf:type schema:Person
102 sg:person.014603755431.88 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
103 schema:familyName Musikhin
104 schema:givenName Yu. G.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014603755431.88
106 rdf:type schema:Person
107 sg:person.014730523656.90 schema:affiliation https://www.grid.ac/institutes/grid.450314.7
108 schema:familyName Putyato
109 schema:givenName M. A.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014730523656.90
111 rdf:type schema:Person
112 sg:person.016026355533.82 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
113 schema:familyName Yagovkina
114 schema:givenName M. A.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016026355533.82
116 rdf:type schema:Person
117 https://doi.org/10.1016/0022-0248(91)90943-y schema:sameAs https://app.dimensions.ai/details/publication/pub.1016682839
118 rdf:type schema:CreativeWork
119 https://doi.org/10.1063/1.101229 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057648813
120 rdf:type schema:CreativeWork
121 https://doi.org/10.1063/1.105729 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057653298
122 rdf:type schema:CreativeWork
123 https://doi.org/10.1063/1.113519 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057662240
124 rdf:type schema:CreativeWork
125 https://doi.org/10.1063/1.114782 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057676124
126 rdf:type schema:CreativeWork
127 https://doi.org/10.1063/1.119091 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057683281
128 rdf:type schema:CreativeWork
129 https://doi.org/10.1063/1.120115 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057684297
130 rdf:type schema:CreativeWork
131 https://doi.org/10.1109/55.2046 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061187636
132 rdf:type schema:CreativeWork
133 https://doi.org/10.1364/ao.42.001726 schema:sameAs https://app.dimensions.ai/details/publication/pub.1065118026
134 rdf:type schema:CreativeWork
135 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
136 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
137 rdf:type schema:Organization
138 https://www.grid.ac/institutes/grid.450314.7 schema:alternateName Institute of Semiconductor Physics
139 schema:name Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, 630090, Novosibirsk, Russia
140 rdf:type schema:Organization
 




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