Effect of the design and technology factors on electrical characteristics of the Au/Ti-n-GaAs Schottky diodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-06

AUTHORS

D. N. Zakharov, V. M. Kalygina, A. V. Netudykhatko, A. V. Panin

ABSTRACT

Electrical properties of the Au/Ti-n-GaAs Schottky diodes are studied in relation to the production technology. The forward and reverse current-voltage characteristics of the diodes at low electric fields are analyzed on the basis of the mechanism of thermionic emission through the metal-semiconductor barrier. It is assumed that an increase in the reverse currents in the voltage range from 20 to 60 V can be accounted for by the Pool-Frenkel effect. The excess reverse currents at voltages higher than 60 V are caused by the phonon-assisted tunneling via deep states in the depletion region of the semiconductor. More... »

PAGES

728-733

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606060194

DOI

http://dx.doi.org/10.1134/s1063782606060194

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1053226365


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Tomsk State University", 
          "id": "https://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "Kuznetsov Siberian Physicotechnical Institute at the Tomsk State University, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zakharov", 
        "givenName": "D. N.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Tomsk State University", 
          "id": "https://www.grid.ac/institutes/grid.77602.34", 
          "name": [
            "Kuznetsov Siberian Physicotechnical Institute at the Tomsk State University, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kalygina", 
        "givenName": "V. M.", 
        "id": "sg:person.012205123042.40", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012205123042.40"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Research Institute of Semiconductor Devices", 
          "id": "https://www.grid.ac/institutes/grid.494887.e", 
          "name": [
            "Research Institute of Semiconductor Devices, 634050, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Netudykhatko", 
        "givenName": "A. V.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Strength Physics and Materials Science", 
          "id": "https://www.grid.ac/institutes/grid.467103.7", 
          "name": [
            "Institute of Strength Physics and Materials Science, Siberian Division, Russian Academy of Sciences, 634021, Tomsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Panin", 
        "givenName": "A. V.", 
        "id": "sg:person.014616167505.66", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014616167505.66"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0038-1098(85)91097-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012260758"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1098(85)91097-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012260758"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2006-06", 
    "datePublishedReg": "2006-06-01", 
    "description": "Electrical properties of the Au/Ti-n-GaAs Schottky diodes are studied in relation to the production technology. The forward and reverse current-voltage characteristics of the diodes at low electric fields are analyzed on the basis of the mechanism of thermionic emission through the metal-semiconductor barrier. It is assumed that an increase in the reverse currents in the voltage range from 20 to 60 V can be accounted for by the Pool-Frenkel effect. The excess reverse currents at voltages higher than 60 V are caused by the phonon-assisted tunneling via deep states in the depletion region of the semiconductor.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782606060194", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "40"
      }
    ], 
    "name": "Effect of the design and technology factors on electrical characteristics of the Au/Ti-n-GaAs Schottky diodes", 
    "pagination": "728-733", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "fd873d39e97d234efca066799ab9f9bbf1a5f428e6adb41896472c0d907e6d4a"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782606060194"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1053226365"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782606060194", 
      "https://app.dimensions.ai/details/publication/pub.1053226365"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T19:07", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8678_00000508.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134%2FS1063782606060194"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782606060194'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782606060194'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782606060194'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782606060194'


 

This table displays all metadata directly associated to this object as RDF triples.

89 TRIPLES      21 PREDICATES      28 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782606060194 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N9690ff76b3554811a418f94204ff9df3
4 schema:citation https://doi.org/10.1016/0038-1098(85)91097-x
5 schema:datePublished 2006-06
6 schema:datePublishedReg 2006-06-01
7 schema:description Electrical properties of the Au/Ti-n-GaAs Schottky diodes are studied in relation to the production technology. The forward and reverse current-voltage characteristics of the diodes at low electric fields are analyzed on the basis of the mechanism of thermionic emission through the metal-semiconductor barrier. It is assumed that an increase in the reverse currents in the voltage range from 20 to 60 V can be accounted for by the Pool-Frenkel effect. The excess reverse currents at voltages higher than 60 V are caused by the phonon-assisted tunneling via deep states in the depletion region of the semiconductor.
8 schema:genre research_article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N2c16d104903f4710bc8c496d6636a7a7
12 Nc4c4d77c061f47a5a4042f6b0dee5841
13 sg:journal.1136692
14 schema:name Effect of the design and technology factors on electrical characteristics of the Au/Ti-n-GaAs Schottky diodes
15 schema:pagination 728-733
16 schema:productId N5773c0f9474e4078870cfd3693256c3e
17 Nab9e69e288a248288c4d3cbb5223aeea
18 Nd03c35e0d99e416a8a428efc9f0cd810
19 schema:sameAs https://app.dimensions.ai/details/publication/pub.1053226365
20 https://doi.org/10.1134/s1063782606060194
21 schema:sdDatePublished 2019-04-10T19:07
22 schema:sdLicense https://scigraph.springernature.com/explorer/license/
23 schema:sdPublisher N69aaf0113345440eae5245f2e5bad585
24 schema:url http://link.springer.com/10.1134%2FS1063782606060194
25 sgo:license sg:explorer/license/
26 sgo:sdDataset articles
27 rdf:type schema:ScholarlyArticle
28 N28f3a46d7ef94726a3df93a185c52ff7 rdf:first sg:person.012205123042.40
29 rdf:rest Nd0a06ed28b4142668b7d12631934a06a
30 N2c16d104903f4710bc8c496d6636a7a7 schema:volumeNumber 40
31 rdf:type schema:PublicationVolume
32 N338a82b207f543bba19b28f23b2f6182 schema:affiliation https://www.grid.ac/institutes/grid.494887.e
33 schema:familyName Netudykhatko
34 schema:givenName A. V.
35 rdf:type schema:Person
36 N4e3447a8da6c476ba17a6b8e2beec2ef rdf:first sg:person.014616167505.66
37 rdf:rest rdf:nil
38 N5773c0f9474e4078870cfd3693256c3e schema:name readcube_id
39 schema:value fd873d39e97d234efca066799ab9f9bbf1a5f428e6adb41896472c0d907e6d4a
40 rdf:type schema:PropertyValue
41 N69aaf0113345440eae5245f2e5bad585 schema:name Springer Nature - SN SciGraph project
42 rdf:type schema:Organization
43 N9690ff76b3554811a418f94204ff9df3 rdf:first Neffde6a48a154bdd938488d3a7dfca59
44 rdf:rest N28f3a46d7ef94726a3df93a185c52ff7
45 Nab9e69e288a248288c4d3cbb5223aeea schema:name dimensions_id
46 schema:value pub.1053226365
47 rdf:type schema:PropertyValue
48 Nc4c4d77c061f47a5a4042f6b0dee5841 schema:issueNumber 6
49 rdf:type schema:PublicationIssue
50 Nd03c35e0d99e416a8a428efc9f0cd810 schema:name doi
51 schema:value 10.1134/s1063782606060194
52 rdf:type schema:PropertyValue
53 Nd0a06ed28b4142668b7d12631934a06a rdf:first N338a82b207f543bba19b28f23b2f6182
54 rdf:rest N4e3447a8da6c476ba17a6b8e2beec2ef
55 Neffde6a48a154bdd938488d3a7dfca59 schema:affiliation https://www.grid.ac/institutes/grid.77602.34
56 schema:familyName Zakharov
57 schema:givenName D. N.
58 rdf:type schema:Person
59 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
60 schema:name Engineering
61 rdf:type schema:DefinedTerm
62 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
63 schema:name Materials Engineering
64 rdf:type schema:DefinedTerm
65 sg:journal.1136692 schema:issn 1063-7826
66 1090-6479
67 schema:name Semiconductors
68 rdf:type schema:Periodical
69 sg:person.012205123042.40 schema:affiliation https://www.grid.ac/institutes/grid.77602.34
70 schema:familyName Kalygina
71 schema:givenName V. M.
72 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012205123042.40
73 rdf:type schema:Person
74 sg:person.014616167505.66 schema:affiliation https://www.grid.ac/institutes/grid.467103.7
75 schema:familyName Panin
76 schema:givenName A. V.
77 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014616167505.66
78 rdf:type schema:Person
79 https://doi.org/10.1016/0038-1098(85)91097-x schema:sameAs https://app.dimensions.ai/details/publication/pub.1012260758
80 rdf:type schema:CreativeWork
81 https://www.grid.ac/institutes/grid.467103.7 schema:alternateName Institute of Strength Physics and Materials Science
82 schema:name Institute of Strength Physics and Materials Science, Siberian Division, Russian Academy of Sciences, 634021, Tomsk, Russia
83 rdf:type schema:Organization
84 https://www.grid.ac/institutes/grid.494887.e schema:alternateName Research Institute of Semiconductor Devices
85 schema:name Research Institute of Semiconductor Devices, 634050, Tomsk, Russia
86 rdf:type schema:Organization
87 https://www.grid.ac/institutes/grid.77602.34 schema:alternateName Tomsk State University
88 schema:name Kuznetsov Siberian Physicotechnical Institute at the Tomsk State University, 634050, Tomsk, Russia
89 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...