VCSELs based on arrays of sub-monolayer InGaAs quantum dots View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-05

AUTHORS

S. A. Blokhin, N. A. Maleev, A. G. Kuz’menkov, Yu. M. Shernyakov, I. I. Novikov, N. Yu. Gordeev, V. V. Dyudelev, G. S. Sokolovskiĭ, V. I. Kuchinskiĭ, M. M. Kulagina, M. V. Maximov, V. M. Ustinov, A. R. Kovsh, S. S. Mikhrin, N. N. Ledentsov

ABSTRACT

Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 µm in diameter demonstrate single-mode lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency of 68%. Multimode VCSELs with a (10–12)-µm aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors. More... »

PAGES

615-619

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606050186

DOI

http://dx.doi.org/10.1134/s1063782606050186

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045208096


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