The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon View Full Text


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Article Info

DATE

2006-05

AUTHORS

B. M. Bulakh, N. E. Korsunska, L. Yu. Khomenkova, T. R. Staraya, M. K. Sheĭnkman

ABSTRACT

The photoluminescence spectra of porous silicon and their temperature dependences and transformations on aging are studied. It is shown that the infrared band prevailing in the spectra of as-prepared samples is due to exciton recombination in silicon crystallites. On aging, a well-pronounced additional band is observed at shorter wavelengths of the spectra. It is assumed that this band is due to the recombination of carriers that are excited in silicon crystallites and recombine via some centers located in oxide. It is shown that the broad band commonly observable in oxidized porous silicon is a superposition of the above two bands. The dependences of the peak positions and integrated intensities of the bands on time and temperature are studied. The data on the distribution of oxide centers with depth in the porous layer are obtained. More... »

PAGES

598-604

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606050150

DOI

http://dx.doi.org/10.1134/s1063782606050150

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1047343166


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