The study of lateral carrier transport in structures with InGaN quantum dots in the active region View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2006-05

AUTHORS

V. S. Sizov, D. S. Sizov, G. A. Mikhailovskiĭ, E. E. Zavarin, V. V. Lundin, A. F. Tsatsul’nikov, N. N. Ledentsov

ABSTRACT

GaN-based structures with InGaN quantum dots in the active region, which emit in the blue and green spectral ranges, are studied. The structures grown by both the conventional method and with the use of special procedures of the growth of the active region were compared. The use of these special growth modes stimulates the activated phase decomposition, which leads to the formation of quantum dots with substantially larger localization depth of electrons. It is shown that the formation of such deep quantum dots, like the formation of larger inhomogeneities of the active region, substantially suppresses the lateral carrier transport. This effect improves the characteristics of light-emitting diode structures at a low injection level and increases the temperature stability of quantum efficiency. More... »

PAGES

574-580

Journal

TITLE

Semiconductors

ISSUE

5

VOLUME

40

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606050113

DOI

http://dx.doi.org/10.1134/s1063782606050113

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1043384281


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