Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers View Full Text


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Article Info

DATE

2006-04-09

AUTHORS

I. A. Kostko, N. A. Gun’ko, N. L. Bazhenov, K. D. Mynbaev, G. G. Zegrya

ABSTRACT

The effect of intraband carrier relaxation on the threshold characteristics of InGaAsP quantum well (QW) lasers is studied. The dependence of the intraband hole-hole relaxation time τint on temperature and carrier density is analyzed. It is shown that taking into account the finiteness of τint and its dependence on temperature and carrier density strongly affects the gain and the threshold current density of QW lasers. More... »

PAGES

481-485

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606040208

DOI

http://dx.doi.org/10.1134/s1063782606040208

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004124097


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