Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures View Full Text


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Article Info

DATE

2006-03

AUTHORS

L. B. Karlina, A. S. Vlasov, M. M. Kulagina, N. Kh. Timoshina

ABSTRACT

Reflection of infrared radiation from n-InP substrates with a rear MgF2/Au mirror is investigated in the wavelength range 1000–2200 nm. It is found that the reflectance weakly depends on substrate thickness and free-carrier concentration in the (0.1–6) × 1018 cm−3 range. Thermophotovoltaic cells based on the InP/In0.53Ga0.47As lattice-matched heterostructure of p-n and n-p are fabricated by liquid-phase epitaxy and Zn and P diffusion from a gas phase. The characteristics of p-n and n-p thermophotovoltaic cells with an identical configuration of the contacts of 1 cm2 area are determined. These characteristics are the open-circuit voltage Uoc = 0.465 V, the filling factor FF = 64% at the current density of 1 A/cm2, and the reflectance R = 76–80% for wavelengths longer than 1.86 μm. More... »

PAGES

346-350

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606030171

DOI

http://dx.doi.org/10.1134/s1063782606030171

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1024355973


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Karlina", 
        "givenName": "L. B.", 
        "id": "sg:person.010706142221.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010706142221.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vlasov", 
        "givenName": "A. S.", 
        "id": "sg:person.014602113335.79", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014602113335.79"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kulagina", 
        "givenName": "M. M.", 
        "id": "sg:person.07410421673.58", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07410421673.58"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Timoshina", 
        "givenName": "N. Kh.", 
        "id": "sg:person.013705471175.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013705471175.43"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2006-03", 
    "datePublishedReg": "2006-03-01", 
    "description": "Reflection of infrared radiation from n-InP substrates with a rear MgF2/Au mirror is investigated in the wavelength range 1000\u20132200 nm. It is found that the reflectance weakly depends on substrate thickness and free-carrier concentration in the (0.1\u20136) \u00d7 1018 cm\u22123 range. Thermophotovoltaic cells based on the InP/In0.53Ga0.47As lattice-matched heterostructure of p-n and n-p are fabricated by liquid-phase epitaxy and Zn and P diffusion from a gas phase. The characteristics of p-n and n-p thermophotovoltaic cells with an identical configuration of the contacts of 1 cm2 area are determined. These characteristics are the open-circuit voltage Uoc = 0.465 V, the filling factor FF = 64% at the current density of 1 A/cm2, and the reflectance R = 76\u201380% for wavelengths longer than 1.86 \u03bcm.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782606030171", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "40"
      }
    ], 
    "keywords": [
      "thermophotovoltaic cells", 
      "free-carrier concentration", 
      "factor FF", 
      "substrate thickness", 
      "InP/", 
      "lattice-matched heterostructures", 
      "InP substrates", 
      "Au mirror", 
      "heterostructures", 
      "InP heterostructures", 
      "current density", 
      "wavelength", 
      "identical configuration", 
      "liquid-phase epitaxy", 
      "epitaxy", 
      "configuration", 
      "FF", 
      "substrate", 
      "infrared radiation", 
      "characteristics", 
      "cm2 area", 
      "range", 
      "mirror", 
      "cm2", 
      "cells", 
      "reflectance", 
      "thickness", 
      "density", 
      "radiation", 
      "reflection", 
      "reflectance R", 
      "area", 
      "phase", 
      "diffusion", 
      "contact", 
      "range 1000", 
      "concentration", 
      "Zn", 
      "wavelength range 1000", 
      "gas phase", 
      "UOC", 
      "rear MgF2/Au mirror", 
      "MgF2/Au mirror", 
      "open-circuit voltage Uoc", 
      "voltage Uoc", 
      "filling factor FF"
    ], 
    "name": "Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures", 
    "pagination": "346-350", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1024355973"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782606030171"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782606030171", 
      "https://app.dimensions.ai/details/publication/pub.1024355973"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-01-01T18:16", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_425.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782606030171"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

129 TRIPLES      21 PREDICATES      73 URIs      64 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782606030171 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Naf4f02c2ab294247aa26cf47a11b52f9
5 schema:datePublished 2006-03
6 schema:datePublishedReg 2006-03-01
7 schema:description Reflection of infrared radiation from n-InP substrates with a rear MgF2/Au mirror is investigated in the wavelength range 1000–2200 nm. It is found that the reflectance weakly depends on substrate thickness and free-carrier concentration in the (0.1–6) × 1018 cm−3 range. Thermophotovoltaic cells based on the InP/In0.53Ga0.47As lattice-matched heterostructure of p-n and n-p are fabricated by liquid-phase epitaxy and Zn and P diffusion from a gas phase. The characteristics of p-n and n-p thermophotovoltaic cells with an identical configuration of the contacts of 1 cm2 area are determined. These characteristics are the open-circuit voltage Uoc = 0.465 V, the filling factor FF = 64% at the current density of 1 A/cm2, and the reflectance R = 76–80% for wavelengths longer than 1.86 μm.
8 schema:genre article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N044013e4b0a546a59d5894b51fe03bd5
12 N25db933830394864b2bf6f12aa2f07f1
13 sg:journal.1136692
14 schema:keywords Au mirror
15 FF
16 InP heterostructures
17 InP substrates
18 InP/
19 MgF2/Au mirror
20 UOC
21 Zn
22 area
23 cells
24 characteristics
25 cm2
26 cm2 area
27 concentration
28 configuration
29 contact
30 current density
31 density
32 diffusion
33 epitaxy
34 factor FF
35 filling factor FF
36 free-carrier concentration
37 gas phase
38 heterostructures
39 identical configuration
40 infrared radiation
41 lattice-matched heterostructures
42 liquid-phase epitaxy
43 mirror
44 open-circuit voltage Uoc
45 phase
46 radiation
47 range
48 range 1000
49 rear MgF2/Au mirror
50 reflectance
51 reflectance R
52 reflection
53 substrate
54 substrate thickness
55 thermophotovoltaic cells
56 thickness
57 voltage Uoc
58 wavelength
59 wavelength range 1000
60 schema:name Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures
61 schema:pagination 346-350
62 schema:productId N86b4556e4f994bd2be35c91abecf0d01
63 Nc259bd342b064a80bf2bd38d5760a1fd
64 schema:sameAs https://app.dimensions.ai/details/publication/pub.1024355973
65 https://doi.org/10.1134/s1063782606030171
66 schema:sdDatePublished 2022-01-01T18:16
67 schema:sdLicense https://scigraph.springernature.com/explorer/license/
68 schema:sdPublisher Ndea64ca95de3431ab29fd67a485b8f1e
69 schema:url https://doi.org/10.1134/s1063782606030171
70 sgo:license sg:explorer/license/
71 sgo:sdDataset articles
72 rdf:type schema:ScholarlyArticle
73 N044013e4b0a546a59d5894b51fe03bd5 schema:issueNumber 3
74 rdf:type schema:PublicationIssue
75 N25db933830394864b2bf6f12aa2f07f1 schema:volumeNumber 40
76 rdf:type schema:PublicationVolume
77 N3e224ecf9dbb4198bf04a24efc47e5be rdf:first sg:person.07410421673.58
78 rdf:rest N727439c15d004e1a91b60b0aa71eba13
79 N727439c15d004e1a91b60b0aa71eba13 rdf:first sg:person.013705471175.43
80 rdf:rest rdf:nil
81 N86b4556e4f994bd2be35c91abecf0d01 schema:name dimensions_id
82 schema:value pub.1024355973
83 rdf:type schema:PropertyValue
84 Naf4f02c2ab294247aa26cf47a11b52f9 rdf:first sg:person.010706142221.30
85 rdf:rest Nb5c49f12d8ca4ec6bbf7260fae7ce743
86 Nb5c49f12d8ca4ec6bbf7260fae7ce743 rdf:first sg:person.014602113335.79
87 rdf:rest N3e224ecf9dbb4198bf04a24efc47e5be
88 Nc259bd342b064a80bf2bd38d5760a1fd schema:name doi
89 schema:value 10.1134/s1063782606030171
90 rdf:type schema:PropertyValue
91 Ndea64ca95de3431ab29fd67a485b8f1e schema:name Springer Nature - SN SciGraph project
92 rdf:type schema:Organization
93 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
94 schema:name Physical Sciences
95 rdf:type schema:DefinedTerm
96 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
97 schema:name Condensed Matter Physics
98 rdf:type schema:DefinedTerm
99 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
100 schema:name Quantum Physics
101 rdf:type schema:DefinedTerm
102 sg:journal.1136692 schema:issn 1063-7826
103 1090-6479
104 schema:name Semiconductors
105 schema:publisher Pleiades Publishing
106 rdf:type schema:Periodical
107 sg:person.010706142221.30 schema:affiliation grid-institutes:grid.423485.c
108 schema:familyName Karlina
109 schema:givenName L. B.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010706142221.30
111 rdf:type schema:Person
112 sg:person.013705471175.43 schema:affiliation grid-institutes:grid.423485.c
113 schema:familyName Timoshina
114 schema:givenName N. Kh.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013705471175.43
116 rdf:type schema:Person
117 sg:person.014602113335.79 schema:affiliation grid-institutes:grid.423485.c
118 schema:familyName Vlasov
119 schema:givenName A. S.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014602113335.79
121 rdf:type schema:Person
122 sg:person.07410421673.58 schema:affiliation grid-institutes:grid.423485.c
123 schema:familyName Kulagina
124 schema:givenName M. M.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07410421673.58
126 rdf:type schema:Person
127 grid-institutes:grid.423485.c schema:alternateName Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
128 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
129 rdf:type schema:Organization
 




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