Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures View Full Text


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Article Info

DATE

2006-03

AUTHORS

L. B. Karlina, A. S. Vlasov, M. M. Kulagina, N. Kh. Timoshina

ABSTRACT

Reflection of infrared radiation from n-InP substrates with a rear MgF2/Au mirror is investigated in the wavelength range 1000–2200 nm. It is found that the reflectance weakly depends on substrate thickness and free-carrier concentration in the (0.1–6) × 1018 cm−3 range. Thermophotovoltaic cells based on the InP/In0.53Ga0.47As lattice-matched heterostructure of p-n and n-p are fabricated by liquid-phase epitaxy and Zn and P diffusion from a gas phase. The characteristics of p-n and n-p thermophotovoltaic cells with an identical configuration of the contacts of 1 cm2 area are determined. These characteristics are the open-circuit voltage Uoc = 0.465 V, the filling factor FF = 64% at the current density of 1 A/cm2, and the reflectance R = 76–80% for wavelengths longer than 1.86 μm. More... »

PAGES

346-350

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782606030171

DOI

http://dx.doi.org/10.1134/s1063782606030171

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1024355973


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