Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer View Full Text


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Article Info

DATE

2016-09

AUTHORS

S. V. Zaitsev, I. A. Akimov, L. Langer, Yu. A. Danilov, M. V. Dorokhin, B. N. Zvonkov, D. R. Yakovlev, M. Bayer

ABSTRACT

The coherent spin dynamics of carriers in the heterostructures that contain an InGaAs/GaAs quantum well (QW) and an Mn δ layer, which are separated by a narrow GaAs spacer 2–10 nm thick, is comprehensively studied by the magnetooptical Kerr effect method at a picosecond time resolution. The exchange interaction of photoexcited electrons in QW with the ferromagnetic Mn δ layer manifests itself in magnetic-field and temperature dependences of the Larmor precession frequency of electron spins and is found to be very weak (several microelectron volts). Two nonoscillating components related to holes exist apart from an electron contribution to the Kerr signal of polarization plane rotation. At the initial stage, a fast relaxation process, which corresponds to the spin relaxation of free photoexcited holes, is detected in the structures with a wide spacer. The second component is caused by the further spin dephasing of energyrelaxed holes, which are localized at strong QW potential fluctuations in the structures under study. The decay of all contributions to the Kerr signal in time increases substantially when the spacer thickness decreases, which correlates with the enhancement of nonradiative recombination in QW. More... »

PAGES

420-428

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106377611607013x

DOI

http://dx.doi.org/10.1134/s106377611607013x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045378794


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