X-ray diffraction study of short-period AlN/GaN superlattices View Full Text


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Article Info

DATE

2013-12-28

AUTHORS

R. N. Kyutt, M. P. Shcheglov, V. V. Ratnikov, M. A. Yagovkina, V. Yu. Davydov, A. N. Smirnov, M. M. Rozhavskaya, E. E. Zavarin, V. V. Lundin

ABSTRACT

The structure of short-period hexagonal GaN/AlN superlattices (SLs) has been investigated by X-ray diffraction. The samples have been grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal reactor at a temperature of 1050°C on (0001)Al2O3 substrates using GaN and AlN buffer layers. The SL period changes from 2 to 6 nm, and the thickness of the structure varies in a range from 0.3 to 1 μm. The complex of X-ray diffraction techniques includes a measurement of θ-2θ rocking curves of symmetric Bragg reflection, the construction of intensity maps for asymmetric reflections, a measurement and analysis of peak broadenings in different diffraction geometries, a precise measurement of lattice parameters, and the determination of radii of curvature. The thickness and strain of separate SL layers are determined by measuring the θ-2θ rocking curves subsequent simulation. It is shown that most SL samples are completely relaxed as a whole. At the same time, relaxation is absent between sublayers, which is why strains in the AlN and GaN sublayers (on the order of 1.2 × 10−2) have different signs. An analysis of diffraction peak half-widths allows us to determine the densities of individual sets of dislocations and observe their change from buffer layers to SLs. More... »

PAGES

953-958

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063774513070109

DOI

http://dx.doi.org/10.1134/s1063774513070109

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1014552072


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