Etching of SiC in Low Power Inductively-Coupled Plasma View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-11

AUTHORS

A. A. Osipov, S. E. Aleksandrov, Yu. V. Solov’ev, A. A. Uvarov, A. A. Osipov

ABSTRACT

The peculiarities of etching 4H silicon carbide (4H-SiC) in F-containing inductively-coupled plasma at lowered values of power absorbed in an RF discharge are considered. The application of the initial SF6/O2 mixture yielded the most promising results in order to achieve a defect-free morphology of the etching surface of SiC. The influence of bias voltage applied to the substrate holder on the etching rate is identified. The maximum rate of etching in our experiments was 840 nm/min. It is shown that the additional treatment of SiC surface in Ar plasma positively affects the morphology of the etching surface, minimizing the surface density of various defects. More... »

PAGES

427-433

Journal

TITLE

Russian Microelectronics

ISSUE

6

VOLUME

47

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063739719010074

DOI

http://dx.doi.org/10.1134/s1063739719010074

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112738192


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