Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron View Full Text


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Article Info

DATE

2018-12

AUTHORS

T. F. Rusak, K. L. Enisherlova, A. V. Lutzau, V. V. Saraykin, V. I. Korneev

ABSTRACT

The aim of this work is to study the effect that the process of iron and carbon doping of a GaN epitaxial layer on sapphire can influence (affects) on the features of growth of epitaxial films and their dislocation structure. The following research methods are used in the study: secondary ion mass spectroscopy (SIMS), selective chemical etching of spherical sections, and single-crystal diffractometry. It is shown that carbon doping of a GaN epitaxial layer during growth can lead to a significant decrease in the dislocation density of the epitaxial layers. It is also demonstrated that, for samples doped with iron, a decrease in the number of short dislocations in the bulk of the structure is characteristic; however, a large number of extended dislocations are generated, encouraging iron diffusion into the working regions of the heterostructures, which is confirmed by the iron depth distribution of the layers, measured by the SIMS method. More... »

PAGES

598-607

References to SciGraph publications

  • 2007-08. Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
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    http://scigraph.springernature.com/pub.10.1134/s1063739718080097

    DOI

    http://dx.doi.org/10.1134/s1063739718080097

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