Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-11

AUTHORS

M. O. Hrapov, A. V. Gluhov, V. A. Gridchin, S. V. Kalinin

ABSTRACT

The influence of temperature on the most important electrical parameters of a complementary bipolar pair of vertical transistors is numerically investigated in the thermodynamic and drift-diffusion models. The advantage of the thermodynamic model in analyzing high-power transistors due to the fact that this model takes into account the self-heating effect is demonstrated;. The simulation results are compared with the experimental characteristics of the test structures. The comparison shows that, for the current amplification factor β and the Early voltage VA, the computational error is less than 15%; for the critical parameter, the collector–emitter breakdown voltage VCE0, it is less than 2%, which is sufficient to use the thermodynamic model for practical purposes. More... »

PAGES

472-478

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063739718070053

DOI

http://dx.doi.org/10.1134/s1063739718070053

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112738177


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0801", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Artificial Intelligence and Image Processing", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/08", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Information and Computing Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Novosibirsk State Technical University", 
          "id": "https://www.grid.ac/institutes/grid.77667.37", 
          "name": [
            "Novosibirsk State Technical University, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Hrapov", 
        "givenName": "M. O.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "Siberian State University of Informatics and Telecommunications, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gluhov", 
        "givenName": "A. V.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Novosibirsk State Technical University", 
          "id": "https://www.grid.ac/institutes/grid.77667.37", 
          "name": [
            "Novosibirsk State Technical University, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gridchin", 
        "givenName": "V. A.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Novosibirsk State Technical University", 
          "id": "https://www.grid.ac/institutes/grid.77667.37", 
          "name": [
            "Novosibirsk State Technical University, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kalinin", 
        "givenName": "S. V.", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/0038-1101(75)90099-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009755867"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(75)90099-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009755867"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.microrel.2012.06.025", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014580347"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0927-796x(02)00039-6", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026939002"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(70)90139-5", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042207696"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/0038-1101(70)90139-5", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042207696"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-7091-8752-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048041985", 
          "https://doi.org/10.1007/978-3-7091-8752-4"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-7091-8752-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048041985", 
          "https://doi.org/10.1007/978-3-7091-8752-4"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.345414", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057954171"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/16.960378", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061097733"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/t-ed.1975.18267", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061460225"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/t-ed.1982.20698", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061462453"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1109/t-ed.1983.21257", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1061462971"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-11", 
    "datePublishedReg": "2018-11-01", 
    "description": "The influence of temperature on the most important electrical parameters of a complementary bipolar pair of vertical transistors is numerically investigated in the thermodynamic and drift-diffusion models. The advantage of the thermodynamic model in analyzing high-power transistors due to the fact that this model takes into account the self-heating effect is demonstrated;. The simulation results are compared with the experimental characteristics of the test structures. The comparison shows that, for the current amplification factor \u03b2 and the Early voltage VA, the computational error is less than 15%; for the critical parameter, the collector\u2013emitter breakdown voltage VCE0, it is less than 2%, which is sufficient to use the thermodynamic model for practical purposes.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063739718070053", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136391", 
        "issn": [
          "1063-7397", 
          "1608-3415"
        ], 
        "name": "Russian Microelectronics", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "47"
      }
    ], 
    "name": "Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors", 
    "pagination": "472-478", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "a1bc19f3b5ddd0872215f8a349a3219f54a61fe207d082e566b6f90da7a9451c"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063739718070053"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1112738177"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063739718070053", 
      "https://app.dimensions.ai/details/publication/pub.1112738177"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T11:34", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000358_0000000358/records_127422_00000011.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://link.springer.com/10.1134%2FS1063739718070053"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063739718070053'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063739718070053'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063739718070053'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063739718070053'


 

This table displays all metadata directly associated to this object as RDF triples.

111 TRIPLES      21 PREDICATES      37 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063739718070053 schema:about anzsrc-for:08
2 anzsrc-for:0801
3 schema:author N3c5c7366a9b540dd82abac15e3acfaf4
4 schema:citation sg:pub.10.1007/978-3-7091-8752-4
5 https://doi.org/10.1016/0038-1101(70)90139-5
6 https://doi.org/10.1016/0038-1101(75)90099-4
7 https://doi.org/10.1016/j.microrel.2012.06.025
8 https://doi.org/10.1016/s0927-796x(02)00039-6
9 https://doi.org/10.1063/1.345414
10 https://doi.org/10.1109/16.960378
11 https://doi.org/10.1109/t-ed.1975.18267
12 https://doi.org/10.1109/t-ed.1982.20698
13 https://doi.org/10.1109/t-ed.1983.21257
14 schema:datePublished 2018-11
15 schema:datePublishedReg 2018-11-01
16 schema:description The influence of temperature on the most important electrical parameters of a complementary bipolar pair of vertical transistors is numerically investigated in the thermodynamic and drift-diffusion models. The advantage of the thermodynamic model in analyzing high-power transistors due to the fact that this model takes into account the self-heating effect is demonstrated;. The simulation results are compared with the experimental characteristics of the test structures. The comparison shows that, for the current amplification factor β and the Early voltage VA, the computational error is less than 15%; for the critical parameter, the collector–emitter breakdown voltage VCE0, it is less than 2%, which is sufficient to use the thermodynamic model for practical purposes.
17 schema:genre research_article
18 schema:inLanguage en
19 schema:isAccessibleForFree false
20 schema:isPartOf Ndc64e6cfdabe44d69b0c6af3b86af581
21 Ne1647f503092417a91a61a5e24ad9b51
22 sg:journal.1136391
23 schema:name Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors
24 schema:pagination 472-478
25 schema:productId N03896feea0304f1d8daad82bebca2b8e
26 N8cabb7e2159249c5b76b1c844363358e
27 Nd29bc9b873ab47fc9a75d4732dfa0a91
28 schema:sameAs https://app.dimensions.ai/details/publication/pub.1112738177
29 https://doi.org/10.1134/s1063739718070053
30 schema:sdDatePublished 2019-04-11T11:34
31 schema:sdLicense https://scigraph.springernature.com/explorer/license/
32 schema:sdPublisher Naa103012dee34a41ad4d6cd2eecd9a36
33 schema:url https://link.springer.com/10.1134%2FS1063739718070053
34 sgo:license sg:explorer/license/
35 sgo:sdDataset articles
36 rdf:type schema:ScholarlyArticle
37 N03896feea0304f1d8daad82bebca2b8e schema:name readcube_id
38 schema:value a1bc19f3b5ddd0872215f8a349a3219f54a61fe207d082e566b6f90da7a9451c
39 rdf:type schema:PropertyValue
40 N165f26db83764c3292b4c203b99a48cd schema:name Siberian State University of Informatics and Telecommunications, Novosibirsk, Russia
41 rdf:type schema:Organization
42 N3c5c7366a9b540dd82abac15e3acfaf4 rdf:first Nc74425ffd7f84c42a8c46bf5487b5c85
43 rdf:rest N7fb3ef8079084c26a8a4f28c522b5e2e
44 N4680cc39ee994702b9c5e000179235b1 rdf:first N757220d05e3a4846ac70a5673f2bbf08
45 rdf:rest N584fd1aa3c8d4ba691f6c6c2ef9b6ccc
46 N584fd1aa3c8d4ba691f6c6c2ef9b6ccc rdf:first N99f47ca36c1045c4acebba46c455a217
47 rdf:rest rdf:nil
48 N5c99eeb68fa84c41b8d5c4bb2ca2709b schema:affiliation N165f26db83764c3292b4c203b99a48cd
49 schema:familyName Gluhov
50 schema:givenName A. V.
51 rdf:type schema:Person
52 N757220d05e3a4846ac70a5673f2bbf08 schema:affiliation https://www.grid.ac/institutes/grid.77667.37
53 schema:familyName Gridchin
54 schema:givenName V. A.
55 rdf:type schema:Person
56 N7fb3ef8079084c26a8a4f28c522b5e2e rdf:first N5c99eeb68fa84c41b8d5c4bb2ca2709b
57 rdf:rest N4680cc39ee994702b9c5e000179235b1
58 N8cabb7e2159249c5b76b1c844363358e schema:name doi
59 schema:value 10.1134/s1063739718070053
60 rdf:type schema:PropertyValue
61 N99f47ca36c1045c4acebba46c455a217 schema:affiliation https://www.grid.ac/institutes/grid.77667.37
62 schema:familyName Kalinin
63 schema:givenName S. V.
64 rdf:type schema:Person
65 Naa103012dee34a41ad4d6cd2eecd9a36 schema:name Springer Nature - SN SciGraph project
66 rdf:type schema:Organization
67 Nc74425ffd7f84c42a8c46bf5487b5c85 schema:affiliation https://www.grid.ac/institutes/grid.77667.37
68 schema:familyName Hrapov
69 schema:givenName M. O.
70 rdf:type schema:Person
71 Nd29bc9b873ab47fc9a75d4732dfa0a91 schema:name dimensions_id
72 schema:value pub.1112738177
73 rdf:type schema:PropertyValue
74 Ndc64e6cfdabe44d69b0c6af3b86af581 schema:volumeNumber 47
75 rdf:type schema:PublicationVolume
76 Ne1647f503092417a91a61a5e24ad9b51 schema:issueNumber 7
77 rdf:type schema:PublicationIssue
78 anzsrc-for:08 schema:inDefinedTermSet anzsrc-for:
79 schema:name Information and Computing Sciences
80 rdf:type schema:DefinedTerm
81 anzsrc-for:0801 schema:inDefinedTermSet anzsrc-for:
82 schema:name Artificial Intelligence and Image Processing
83 rdf:type schema:DefinedTerm
84 sg:journal.1136391 schema:issn 1063-7397
85 1608-3415
86 schema:name Russian Microelectronics
87 rdf:type schema:Periodical
88 sg:pub.10.1007/978-3-7091-8752-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048041985
89 https://doi.org/10.1007/978-3-7091-8752-4
90 rdf:type schema:CreativeWork
91 https://doi.org/10.1016/0038-1101(70)90139-5 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042207696
92 rdf:type schema:CreativeWork
93 https://doi.org/10.1016/0038-1101(75)90099-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009755867
94 rdf:type schema:CreativeWork
95 https://doi.org/10.1016/j.microrel.2012.06.025 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014580347
96 rdf:type schema:CreativeWork
97 https://doi.org/10.1016/s0927-796x(02)00039-6 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026939002
98 rdf:type schema:CreativeWork
99 https://doi.org/10.1063/1.345414 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057954171
100 rdf:type schema:CreativeWork
101 https://doi.org/10.1109/16.960378 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061097733
102 rdf:type schema:CreativeWork
103 https://doi.org/10.1109/t-ed.1975.18267 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061460225
104 rdf:type schema:CreativeWork
105 https://doi.org/10.1109/t-ed.1982.20698 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061462453
106 rdf:type schema:CreativeWork
107 https://doi.org/10.1109/t-ed.1983.21257 schema:sameAs https://app.dimensions.ai/details/publication/pub.1061462971
108 rdf:type schema:CreativeWork
109 https://www.grid.ac/institutes/grid.77667.37 schema:alternateName Novosibirsk State Technical University
110 schema:name Novosibirsk State Technical University, Novosibirsk, Russia
111 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...