Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-11

AUTHORS

A. A. Rezvanov, I. V. Matyushkin, O. P. Gushchin, E. S. Gornev

ABSTRACT

Using an imitational cellular-automaton model, the structural degradation of a interlayer low-K dielectric during the plasma etching etching of a photoresist is studied. The dielectric represents a porous material based on SiOCH, whose integral dielectric permittivity depends on the percentage of carbon atoms on the pore walls and in the dielectric matrix. The period of etching is such that the removal of carbon (and, accordingly, degradation) is incomplete. The simulation is performed for 2 million steps of the automaton, which correspond to 2 s in the real process. During this period, the number of methyl groups does not exceed 20% of the initial value at the dielectric pore depth of 40 nm; in this case, the permittivity ε increases from 2.5 to 2.84. Extrapolating to a longer time period (nearly 1 min) shows that the total fraction of СН3-groups is 9% of the initial value through the full depth of the material, while the final value of dielectric permittivity would correspond to 3.0–3.1. The results of the modeling agree with the experimental data described in the literature. More... »

PAGES

415-426

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063739718060057

DOI

http://dx.doi.org/10.1134/s1063739718060057

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112738169


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0202", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Atomic, Molecular, Nuclear, Particle and Plasma Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Moscow Institute of Physics and Technology", 
          "id": "https://www.grid.ac/institutes/grid.18763.3b", 
          "name": [
            "Moscow Institute of Physics and Technology, 141701, Dolgoprudnyi, Moscow oblast, Russia", 
            "Molecular Electronics Research Institute, 124460, Moscow, Zelenograd, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Rezvanov", 
        "givenName": "A. A.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "National Research University of Electronic Technology", 
          "id": "https://www.grid.ac/institutes/grid.436529.f", 
          "name": [
            "Molecular Electronics Research Institute, 124460, Moscow, Zelenograd, Russia", 
            "Moscow Institute of Electronic Technology, 124498, Moscow, Zelenograd, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Matyushkin", 
        "givenName": "I. V.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "Molecular Electronics Research Institute, 124460, Moscow, Zelenograd, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gushchin", 
        "givenName": "O. P.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Moscow Institute of Physics and Technology", 
          "id": "https://www.grid.ac/institutes/grid.18763.3b", 
          "name": [
            "Moscow Institute of Physics and Technology, 141701, Dolgoprudnyi, Moscow oblast, Russia", 
            "Molecular Electronics Research Institute, 124460, Moscow, Zelenograd, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gornev", 
        "givenName": "E. S.", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1149/2.0081501jss", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012405888"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.2085270", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012966339", 
          "https://doi.org/10.1134/1.2085270"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.2085270", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012966339", 
          "https://doi.org/10.1134/1.2085270"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.4906816", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1025088309"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1117/12.2266626", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027547237"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.2834562", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1033800043"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782608110249", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1053193390", 
          "https://doi.org/10.1134/s1063782608110249"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/cr9002819", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1053917619"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/cr9002819", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1053917619"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1562744", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057720432"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1567460", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057721056"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1943504", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057833429"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.3486084", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057960312"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1070/pu1999v042n05abeh000558", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058173020"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.1755220", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062169691"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.2738489", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062172440"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.3006021", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062173539"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1116/1.4718444", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062176191"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-11", 
    "datePublishedReg": "2018-11-01", 
    "description": "Using an imitational cellular-automaton model, the structural degradation of a interlayer low-K dielectric during the plasma etching etching of a photoresist is studied. The dielectric represents a porous material based on SiOCH, whose integral dielectric permittivity depends on the percentage of carbon atoms on the pore walls and in the dielectric matrix. The period of etching is such that the removal of carbon (and, accordingly, degradation) is incomplete. The simulation is performed for 2 million steps of the automaton, which correspond to 2 s in the real process. During this period, the number of methyl groups does not exceed 20% of the initial value at the dielectric pore depth of 40 nm; in this case, the permittivity \u03b5 increases from 2.5 to 2.84. Extrapolating to a longer time period (nearly 1 min) shows that the total fraction of \u0421\u041d3-groups is 9% of the initial value through the full depth of the material, while the final value of dielectric permittivity would correspond to 3.0\u20133.1. The results of the modeling agree with the experimental data described in the literature.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063739718060057", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136391", 
        "issn": [
          "1063-7397", 
          "1608-3415"
        ], 
        "name": "Russian Microelectronics", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "47"
      }
    ], 
    "name": "Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma", 
    "pagination": "415-426", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "7f31efd6eb889411a81093fe9871bf31ba7e4ea148e130794810cd8ad3641a76"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063739718060057"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1112738169"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063739718060057", 
      "https://app.dimensions.ai/details/publication/pub.1112738169"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T11:42", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000358_0000000358/records_127444_00000011.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://link.springer.com/10.1134%2FS1063739718060057"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063739718060057'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063739718060057'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063739718060057'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063739718060057'


 

This table displays all metadata directly associated to this object as RDF triples.

135 TRIPLES      21 PREDICATES      43 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063739718060057 schema:about anzsrc-for:02
2 anzsrc-for:0202
3 schema:author N473d6d4eed854a10af9b541d28a297de
4 schema:citation sg:pub.10.1134/1.2085270
5 sg:pub.10.1134/s1063782608110249
6 https://doi.org/10.1021/cr9002819
7 https://doi.org/10.1063/1.1562744
8 https://doi.org/10.1063/1.1567460
9 https://doi.org/10.1063/1.1943504
10 https://doi.org/10.1063/1.3486084
11 https://doi.org/10.1070/pu1999v042n05abeh000558
12 https://doi.org/10.1116/1.1755220
13 https://doi.org/10.1116/1.2738489
14 https://doi.org/10.1116/1.2834562
15 https://doi.org/10.1116/1.3006021
16 https://doi.org/10.1116/1.4718444
17 https://doi.org/10.1116/1.4906816
18 https://doi.org/10.1117/12.2266626
19 https://doi.org/10.1149/2.0081501jss
20 schema:datePublished 2018-11
21 schema:datePublishedReg 2018-11-01
22 schema:description Using an imitational cellular-automaton model, the structural degradation of a interlayer low-K dielectric during the plasma etching etching of a photoresist is studied. The dielectric represents a porous material based on SiOCH, whose integral dielectric permittivity depends on the percentage of carbon atoms on the pore walls and in the dielectric matrix. The period of etching is such that the removal of carbon (and, accordingly, degradation) is incomplete. The simulation is performed for 2 million steps of the automaton, which correspond to 2 s in the real process. During this period, the number of methyl groups does not exceed 20% of the initial value at the dielectric pore depth of 40 nm; in this case, the permittivity ε increases from 2.5 to 2.84. Extrapolating to a longer time period (nearly 1 min) shows that the total fraction of СН3-groups is 9% of the initial value through the full depth of the material, while the final value of dielectric permittivity would correspond to 3.0–3.1. The results of the modeling agree with the experimental data described in the literature.
23 schema:genre research_article
24 schema:inLanguage en
25 schema:isAccessibleForFree false
26 schema:isPartOf N2fdc5709f02d4886962a233167026d0a
27 Ndcc035bba8354af5b51cd176d331b71f
28 sg:journal.1136391
29 schema:name Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma
30 schema:pagination 415-426
31 schema:productId N1b5ebb68ec5d4b468b393a5d42d3887c
32 N458e7539ca564dde81ce0f1aaa917bc9
33 N642aeb3eb97f40d9b4b818bb24f40cdb
34 schema:sameAs https://app.dimensions.ai/details/publication/pub.1112738169
35 https://doi.org/10.1134/s1063739718060057
36 schema:sdDatePublished 2019-04-11T11:42
37 schema:sdLicense https://scigraph.springernature.com/explorer/license/
38 schema:sdPublisher N2616bc7b2d11495c8d5acb144505ead4
39 schema:url https://link.springer.com/10.1134%2FS1063739718060057
40 sgo:license sg:explorer/license/
41 sgo:sdDataset articles
42 rdf:type schema:ScholarlyArticle
43 N1030ec36f9f143da87aad92d8b56c5d4 schema:affiliation https://www.grid.ac/institutes/grid.18763.3b
44 schema:familyName Gornev
45 schema:givenName E. S.
46 rdf:type schema:Person
47 N1b5ebb68ec5d4b468b393a5d42d3887c schema:name doi
48 schema:value 10.1134/s1063739718060057
49 rdf:type schema:PropertyValue
50 N2616bc7b2d11495c8d5acb144505ead4 schema:name Springer Nature - SN SciGraph project
51 rdf:type schema:Organization
52 N29df266342df424480f3b7510fff9d7c schema:affiliation Nd88088d910724dfaa22671e434dfec63
53 schema:familyName Gushchin
54 schema:givenName O. P.
55 rdf:type schema:Person
56 N2fdc5709f02d4886962a233167026d0a schema:issueNumber 6
57 rdf:type schema:PublicationIssue
58 N458e7539ca564dde81ce0f1aaa917bc9 schema:name readcube_id
59 schema:value 7f31efd6eb889411a81093fe9871bf31ba7e4ea148e130794810cd8ad3641a76
60 rdf:type schema:PropertyValue
61 N473d6d4eed854a10af9b541d28a297de rdf:first N7efcd1ceca41454db26a56f722c0d527
62 rdf:rest N74391fe8036e42ff8b0045c06d1f2076
63 N642aeb3eb97f40d9b4b818bb24f40cdb schema:name dimensions_id
64 schema:value pub.1112738169
65 rdf:type schema:PropertyValue
66 N74391fe8036e42ff8b0045c06d1f2076 rdf:first Nf9ffae758167429d85950179acaf38d7
67 rdf:rest Nb071421c03ac424cb338127fba26db4d
68 N7efcd1ceca41454db26a56f722c0d527 schema:affiliation https://www.grid.ac/institutes/grid.18763.3b
69 schema:familyName Rezvanov
70 schema:givenName A. A.
71 rdf:type schema:Person
72 Nb071421c03ac424cb338127fba26db4d rdf:first N29df266342df424480f3b7510fff9d7c
73 rdf:rest Nb99cb8632b31403998fb796cbeee1a80
74 Nb99cb8632b31403998fb796cbeee1a80 rdf:first N1030ec36f9f143da87aad92d8b56c5d4
75 rdf:rest rdf:nil
76 Nd88088d910724dfaa22671e434dfec63 schema:name Molecular Electronics Research Institute, 124460, Moscow, Zelenograd, Russia
77 rdf:type schema:Organization
78 Ndcc035bba8354af5b51cd176d331b71f schema:volumeNumber 47
79 rdf:type schema:PublicationVolume
80 Nf9ffae758167429d85950179acaf38d7 schema:affiliation https://www.grid.ac/institutes/grid.436529.f
81 schema:familyName Matyushkin
82 schema:givenName I. V.
83 rdf:type schema:Person
84 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
85 schema:name Physical Sciences
86 rdf:type schema:DefinedTerm
87 anzsrc-for:0202 schema:inDefinedTermSet anzsrc-for:
88 schema:name Atomic, Molecular, Nuclear, Particle and Plasma Physics
89 rdf:type schema:DefinedTerm
90 sg:journal.1136391 schema:issn 1063-7397
91 1608-3415
92 schema:name Russian Microelectronics
93 rdf:type schema:Periodical
94 sg:pub.10.1134/1.2085270 schema:sameAs https://app.dimensions.ai/details/publication/pub.1012966339
95 https://doi.org/10.1134/1.2085270
96 rdf:type schema:CreativeWork
97 sg:pub.10.1134/s1063782608110249 schema:sameAs https://app.dimensions.ai/details/publication/pub.1053193390
98 https://doi.org/10.1134/s1063782608110249
99 rdf:type schema:CreativeWork
100 https://doi.org/10.1021/cr9002819 schema:sameAs https://app.dimensions.ai/details/publication/pub.1053917619
101 rdf:type schema:CreativeWork
102 https://doi.org/10.1063/1.1562744 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057720432
103 rdf:type schema:CreativeWork
104 https://doi.org/10.1063/1.1567460 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057721056
105 rdf:type schema:CreativeWork
106 https://doi.org/10.1063/1.1943504 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057833429
107 rdf:type schema:CreativeWork
108 https://doi.org/10.1063/1.3486084 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057960312
109 rdf:type schema:CreativeWork
110 https://doi.org/10.1070/pu1999v042n05abeh000558 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058173020
111 rdf:type schema:CreativeWork
112 https://doi.org/10.1116/1.1755220 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062169691
113 rdf:type schema:CreativeWork
114 https://doi.org/10.1116/1.2738489 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062172440
115 rdf:type schema:CreativeWork
116 https://doi.org/10.1116/1.2834562 schema:sameAs https://app.dimensions.ai/details/publication/pub.1033800043
117 rdf:type schema:CreativeWork
118 https://doi.org/10.1116/1.3006021 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062173539
119 rdf:type schema:CreativeWork
120 https://doi.org/10.1116/1.4718444 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062176191
121 rdf:type schema:CreativeWork
122 https://doi.org/10.1116/1.4906816 schema:sameAs https://app.dimensions.ai/details/publication/pub.1025088309
123 rdf:type schema:CreativeWork
124 https://doi.org/10.1117/12.2266626 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027547237
125 rdf:type schema:CreativeWork
126 https://doi.org/10.1149/2.0081501jss schema:sameAs https://app.dimensions.ai/details/publication/pub.1012405888
127 rdf:type schema:CreativeWork
128 https://www.grid.ac/institutes/grid.18763.3b schema:alternateName Moscow Institute of Physics and Technology
129 schema:name Molecular Electronics Research Institute, 124460, Moscow, Zelenograd, Russia
130 Moscow Institute of Physics and Technology, 141701, Dolgoprudnyi, Moscow oblast, Russia
131 rdf:type schema:Organization
132 https://www.grid.ac/institutes/grid.436529.f schema:alternateName National Research University of Electronic Technology
133 schema:name Molecular Electronics Research Institute, 124460, Moscow, Zelenograd, Russia
134 Moscow Institute of Electronic Technology, 124498, Moscow, Zelenograd, Russia
135 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...