Semiconductor nanostructures modified by the UV laser radiation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-05

AUTHORS

N. N. Rubtsova, N. V. Kuleshov, V. E. Kisel, S. A. Kochubei, A. A. Kovalyov, S. V. Kurilchik, V. V. Preobrazhenskii, M. A. Putyato, O. P. Pchelyakov, T. S. Shamirzaev

ABSTRACT

The shortening of the absorption recovery time by a factor of more than 50 is observed for the semiconductor nanostructure consisting of ten GaAs/InxGa1-xAs/GaAs quantum wells irradiated with the nanosecond pulses of the XeCl laser.A possible reason for such a significant variation in the optical properties lies in the generation of point defects,which are responsible for recombination of charge carriers.The result can be employed in the UV photomodification of optical properties of semiconductor nanostructures. More... »

PAGES

1262-1265

Journal

TITLE

Laser Physics

ISSUE

5

VOLUME

20

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1054660x10100051

DOI

http://dx.doi.org/10.1134/s1054660x10100051

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1040958494


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