Angular Dependences of Silicon Sputtering by Gallium Focused Ion Beam View Full Text


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Article Info

DATE

2020-07

AUTHORS

V. I. Bachurin, I. V. Zhuravlev, D. E. Pukhov, A. S. Rudy, S. G. Simakin, M. A. Smirnova, A. B. Churilov

ABSTRACT

Angular dependences of the surface layer composition and the sputtering yield of silicon upon irradiation of the surface with a focused beam of gallium ions with an energy of 30 keV are obtained. The surface composition is analyzed by scanning Auger electron spectroscopy (SAES) and secondary ion mass spectrometry (SIMS). The sputtering yields are determined by measuring the volume of sputtering craters and irradiation doses. It is found that the content of gallium in the surface layer is about 30 at % with incidence angles close to the normal. With incidence angles greater than 30°, the concentration of gallium decreases quite sharply. The angular dependence of the sputtering yield of silicon does not correlate with the content of gallium in the surface layer and is rather well described by the cascade sputtering mechanism proposed by P. Sigmund. More... »

PAGES

784-790

References to SciGraph publications

  • 2003-05. Nanoscale effects in focused ion beam processing in APPLIED PHYSICS A
  • 2018-05. Simulation of Redeposited Silicon Sputtering under Focused Ion Beam Irradiation in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2015-06. Simulation of material sputtering with a focused ion beam in TECHNICAL PHYSICS LETTERS
  • 2019-03. Depth Profiling of Layered Si−O−Al Thin Films with Secondary Ion Mass Spectrometry and Rutherford Backscattering Spectrometry in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1027451020040229

    DOI

    http://dx.doi.org/10.1134/s1027451020040229

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    https://app.dimensions.ai/details/publication/pub.1130332581


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