Radiation Resistance of Devices Based on SiC View Full Text


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Article Info

DATE

2018-03

AUTHORS

A. A. Lebedev, E. V. Kalinina, V. V. Kozlovski

ABSTRACT

The problems of the radiation resistance of diodes for different purposes, created on the basis of lightly doped epitaxial n-4H-SiC layers with Schottky barriers and ion-doped p‒n- and n‒p junctions, are considered. The effect of irradiation with high-energy particles in a wide range of energies and masses—from electrons to Bi heavy ions—on the electrical and optical characteristics of 4H-SiC-based devices is studied. The general regularities of radiation-defect formation under irradiation with different high-energy particles are shown. The high radiation resistance of 4H-SiC is confirmed, and the possibility of increasing its radiation durability and endurance with high energies of irradiating particles and at operating temperatures of up to 400–500°C is shown. More... »

PAGES

364-369

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1027451018020283

DOI

http://dx.doi.org/10.1134/s1027451018020283

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1103644630


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