Radiation resistance of 4H-SiC Schottky diodes under irradiation with 0.9-MeV electrons View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2017-09

AUTHORS

A. A. Lebedev, K. S. Davydovskaya, A. M. Strelchuk, V. V. Kozlovski

ABSTRACT

Degradation of the parameters of 4H-SiC Schottky diodes after irradiation with 0.9-MeV electrons is studied. A charge-carrier removal rate of 0.07–0.09 cm–1 is determined. The Schottky diodes under investigation are shown to retain rectifying current-voltage characteristics up to doses of ~1017 cm–2. The radiation resistance of SiC Schottky diodes is found to be much greater than that of Si p–i–n-diodes with the same breakdown voltage. More... »

PAGES

924-926

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s102745101705010x

DOI

http://dx.doi.org/10.1134/s102745101705010x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1092064010


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