Ionization effects in Si/SiO2: Li, Na, K implanted structures under the impact of high-energy α particles View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2016-05

AUTHORS

A. F. Zatsepin, E. A. Buntov, A. I. Slesarev, D. Yu. Biryukov

ABSTRACT

The method of thermally stimulated electron emission is applied in order to investigate ionization processes and defect formation in Si/SiO2 structures under the impact of high-energy α particles. The implantation of Si/SiO2 films with Li+, Na+, and K+ alkali-metal ions is found to contribute to the formation of active emission L centers in the modified oxide layer, which provides sensitivity to α radiation. The parameters of the emission centers are identified and analyzed. It is shown than Si/SiO2: Li heterostructures could be used to detect α radiation. More... »

PAGES

603-607

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1027451016030368

DOI

http://dx.doi.org/10.1134/s1027451016030368

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049424871


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