Nonlinear effects in semiconductor-conductivity compensation by radiation defects View Full Text


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Article Info

DATE

2014-09

AUTHORS

V. V. Kozlovski, A. E. Vasil’ev, V. V. Emtsev, A. A. Lebedev

ABSTRACT

The dose dependences of the effect of deep semiconductor-conductivity compensation under bombardment with electrons is studied. It is discovered that the linear dependences are characteristic for SiC and GaAs, and the strictly nonlinear dependence is typical of Si. Calculations are carried out, and it is shown that the character of the dose dependence is determined by the compensation mechanism. A model explaining the difference between the characters of the dependences for different semiconductors is proposed. More... »

PAGES

950-952

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1027451014050103

DOI

http://dx.doi.org/10.1134/s1027451014050103

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1048356847


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Polytechnical University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "St. Petersburg State Polytechnical University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kozlovski", 
        "givenName": "V. V.", 
        "id": "sg:person.011730241573.99", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Polytechnical University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "St. Petersburg State Polytechnical University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vasil\u2019ev", 
        "givenName": "A. E.", 
        "id": "sg:person.014567322733.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014567322733.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Emtsev", 
        "givenName": "V. V.", 
        "id": "sg:person.015361621374.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015361621374.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "A. A.", 
        "id": "sg:person.011264364575.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782608020231", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042181518", 
          "https://doi.org/10.1134/s1063782608020231"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2014-09", 
    "datePublishedReg": "2014-09-01", 
    "description": "The dose dependences of the effect of deep semiconductor-conductivity compensation under bombardment with electrons is studied. It is discovered that the linear dependences are characteristic for SiC and GaAs, and the strictly nonlinear dependence is typical of Si. Calculations are carried out, and it is shown that the character of the dose dependence is determined by the compensation mechanism. A model explaining the difference between the characters of the dependences for different semiconductors is proposed.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1027451014050103", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136831", 
        "issn": [
          "1027-4510", 
          "1819-7094"
        ], 
        "name": "Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "5", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "8"
      }
    ], 
    "keywords": [
      "dose dependence", 
      "radiation defects", 
      "different semiconductors", 
      "nonlinear effects", 
      "nonlinear dependence", 
      "dependence", 
      "linear dependence", 
      "bombardment", 
      "electrons", 
      "semiconductors", 
      "GaAs", 
      "Si", 
      "calculations", 
      "SiC", 
      "compensation mechanism", 
      "compensation", 
      "defects", 
      "character", 
      "effect", 
      "mechanism", 
      "model", 
      "differences", 
      "deep semiconductor-conductivity compensation", 
      "semiconductor-conductivity compensation"
    ], 
    "name": "Nonlinear effects in semiconductor-conductivity compensation by radiation defects", 
    "pagination": "950-952", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1048356847"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1027451014050103"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1027451014050103", 
      "https://app.dimensions.ai/details/publication/pub.1048356847"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-01-01T18:34", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_643.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1027451014050103"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

110 TRIPLES      22 PREDICATES      51 URIs      42 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1027451014050103 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 schema:author Nb52874d5de00429d9762d3c21004a4e7
4 schema:citation sg:pub.10.1134/s1063782608020231
5 schema:datePublished 2014-09
6 schema:datePublishedReg 2014-09-01
7 schema:description The dose dependences of the effect of deep semiconductor-conductivity compensation under bombardment with electrons is studied. It is discovered that the linear dependences are characteristic for SiC and GaAs, and the strictly nonlinear dependence is typical of Si. Calculations are carried out, and it is shown that the character of the dose dependence is determined by the compensation mechanism. A model explaining the difference between the characters of the dependences for different semiconductors is proposed.
8 schema:genre article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N65e2601ccea6457cb6b7e147f4593c26
12 Nf56039bad5eb4f5d95f895b939ed80b8
13 sg:journal.1136831
14 schema:keywords GaAs
15 Si
16 SiC
17 bombardment
18 calculations
19 character
20 compensation
21 compensation mechanism
22 deep semiconductor-conductivity compensation
23 defects
24 dependence
25 differences
26 different semiconductors
27 dose dependence
28 effect
29 electrons
30 linear dependence
31 mechanism
32 model
33 nonlinear dependence
34 nonlinear effects
35 radiation defects
36 semiconductor-conductivity compensation
37 semiconductors
38 schema:name Nonlinear effects in semiconductor-conductivity compensation by radiation defects
39 schema:pagination 950-952
40 schema:productId N1d8a0f0565804939b0b03e33cd168dd1
41 Nc2491374424845c1ad874343fbe5524c
42 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048356847
43 https://doi.org/10.1134/s1027451014050103
44 schema:sdDatePublished 2022-01-01T18:34
45 schema:sdLicense https://scigraph.springernature.com/explorer/license/
46 schema:sdPublisher N4f5b637193e040309e482dc2abfa1b78
47 schema:url https://doi.org/10.1134/s1027451014050103
48 sgo:license sg:explorer/license/
49 sgo:sdDataset articles
50 rdf:type schema:ScholarlyArticle
51 N11292b7cc1504c538ea90fde9c445b50 rdf:first sg:person.015361621374.19
52 rdf:rest Nf03d9ef3c2f34830aecc3034a2460799
53 N1d8a0f0565804939b0b03e33cd168dd1 schema:name doi
54 schema:value 10.1134/s1027451014050103
55 rdf:type schema:PropertyValue
56 N335d09f6084d49a3ad7a8670bd6e04f6 rdf:first sg:person.014567322733.53
57 rdf:rest N11292b7cc1504c538ea90fde9c445b50
58 N4f5b637193e040309e482dc2abfa1b78 schema:name Springer Nature - SN SciGraph project
59 rdf:type schema:Organization
60 N65e2601ccea6457cb6b7e147f4593c26 schema:volumeNumber 8
61 rdf:type schema:PublicationVolume
62 Nb52874d5de00429d9762d3c21004a4e7 rdf:first sg:person.011730241573.99
63 rdf:rest N335d09f6084d49a3ad7a8670bd6e04f6
64 Nc2491374424845c1ad874343fbe5524c schema:name dimensions_id
65 schema:value pub.1048356847
66 rdf:type schema:PropertyValue
67 Nf03d9ef3c2f34830aecc3034a2460799 rdf:first sg:person.011264364575.18
68 rdf:rest rdf:nil
69 Nf56039bad5eb4f5d95f895b939ed80b8 schema:issueNumber 5
70 rdf:type schema:PublicationIssue
71 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
72 schema:name Physical Sciences
73 rdf:type schema:DefinedTerm
74 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
75 schema:name Condensed Matter Physics
76 rdf:type schema:DefinedTerm
77 sg:journal.1136831 schema:issn 1027-4510
78 1819-7094
79 schema:name Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
80 schema:publisher Pleiades Publishing
81 rdf:type schema:Periodical
82 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.423485.c
83 schema:familyName Lebedev
84 schema:givenName A. A.
85 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
86 rdf:type schema:Person
87 sg:person.011730241573.99 schema:affiliation grid-institutes:grid.32495.39
88 schema:familyName Kozlovski
89 schema:givenName V. V.
90 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99
91 rdf:type schema:Person
92 sg:person.014567322733.53 schema:affiliation grid-institutes:grid.32495.39
93 schema:familyName Vasil’ev
94 schema:givenName A. E.
95 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014567322733.53
96 rdf:type schema:Person
97 sg:person.015361621374.19 schema:affiliation grid-institutes:grid.423485.c
98 schema:familyName Emtsev
99 schema:givenName V. V.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015361621374.19
101 rdf:type schema:Person
102 sg:pub.10.1134/s1063782608020231 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042181518
103 https://doi.org/10.1134/s1063782608020231
104 rdf:type schema:CreativeWork
105 grid-institutes:grid.32495.39 schema:alternateName St. Petersburg State Polytechnical University, 195251, St. Petersburg, Russia
106 schema:name St. Petersburg State Polytechnical University, 195251, St. Petersburg, Russia
107 rdf:type schema:Organization
108 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
109 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
110 rdf:type schema:Organization
 




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