Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films’ surface layers containing silicon nanocrystals View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-10-08

AUTHORS

V. A. Terekhov, S. Yu. Turishchev, K. N. Pankov, I. E. Zanin, E. P. Domashevskaya, D. I. Tetelbaum, A. N. Mikhailov, A. I. Belov, D. E. Nikolichev

ABSTRACT

Films obtained using molecular-beam deposition of SiO powder on c-Si (111) substrates for the purpose of SiO2 system formation with silicon nanocrystals were investigated before and after 900–1100°C annealing by photoluminescence, ultrasoft X-ray emission spectroscopy, X-ray photoelectron spectroscopy, X-ray absorption near-edge structure spectroscopy, and X-ray diffraction. The appearance of (111)-oriented luminescent silicon nanoclusters in considerable amounts upon annealing at T = 1000–1100°C is established in the investigated films. An anomalous phenomenon of X-ray absorption quantum yield intensity reversal for the L2,3 elementary silicon edge is detected. Models for this phenomenon are suggested. More... »

PAGES

958

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s102745101110020x

DOI

http://dx.doi.org/10.1134/s102745101110020x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1025366411


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